IRFZ14S, SiHFZ14S, SiHFZ14L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology Surface-mount (IRFZ14S, SiHFZ14S) 2 2 I PAK (TO-262) D PAK (TO-263) Low profile through-hole (SiHFZ14L) Available 175 C operating temperature Fast switching Available G Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D G Note S * This datasheet provides information about parts that are D S S G RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. N-Channel MOSFET Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay utilize PRODUCT SUMMARY advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with V (V) 60 DS the fast switching speed and ruggedized device design that R ( )V = 10 V 0.20 DS(on) GS power MOSFETs are well known for, provides the designer Q max. (nC) 11 g with an extremely efficient reliable device for use in a wide Q (nC) 3.1 variety of applications. gs 2 The D PAK (TO-263) is a surface-mount power package Q (nC) 5.8 gd capable of accommodating die sizes up to HEX-4. It Configuration Single provides the highest power capability and lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. The through-hole version (SiHFZ44L) is available for low profile applications. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and halogen-free SiHFZ14S-GE3 SiHFZ14STRL-GE3 SiHFZ14L-GE3 a Lead (Pb)-free IRFZ14SPbF IRFZ14STRLPbF - Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 10 C Continuous drain current V at 10 V I GS D T = 100 C 7.2 A C a Pulsed drain current I 40 DM Linear derating factor 0.29 W/C b Single pulse avalanche energy E 47 mJ AS Maximum power dissipation T = 25 C 43 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 548 H, R = 25 , I = 10 A (see fig. 12) DD J g AS c. I 10 A, di/dt 90 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0684-Rev. D, 07-Sep-2020 Document Number: 90365 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ14S, SiHFZ14S, SiHFZ14L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.063 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 6.0 A -- 0.2 DS(on) GS D b Forward transconductance g V = 25 V, I = 6.0 A 2.4 - - S fs DS D Dynamic Input capacitance C - 300 - iss V = 0 V, GS Output capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -29- rss Total gate charge Q -- 11 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 3.1 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --5.8 gd Turn-on delay time t -10 - d(on) Rise time t -50 - r V = 30 V, I = 10 A, DD D ns b R = 24 , R = 2.7 , see fig. 10 g D Turn-off delay time t -13- d(off) Fall time t -19- f Internal source inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 10 S showing the A G integral reverse a Pulsed diode forward current I -- 40 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 10 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 70 140 ns rr b T = 25 C, I = 10 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q - 200 400 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90365 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000