IRFZ24S, SiHFZ24S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced process technology V (V) 60 DS Surface mount (IRFZ24S, SiHFZ24S) R ( )V = 10 V 0.10 DS(on) GS 175 C operating temperature Available Q max. (nC) 25 g Fast switching Q (nC) 5.8 gs Material categorization: Available for definitions of compliance please see Q (nC) 11 gd www.vishay.com/doc 99912 Configuration Single Note * This datasheet provides information about parts that are D RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. 2 D PAK (TO-263) DESCRIPTION Third generation power MOSFETs from Vishay utilize G advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer S D G with an extremely efficient and reliable device for use in a wide variety of applications. S N-Channel MOSFET 2 The D PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFZ24S-GE3 SiHFZ24STRR-GE3 IRFZ24SPbF IRFZ24STRRPbF Lead (Pb)-free - IRFZ24STRLPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 17 C Continuous Drain Current V at 10 V I GS D T = 100 C 12 A C a, e Pulsed Drain Current I 68 DM Linear Derating Factor 0.40 W/C b, e Single Pulse Avalanche Energy E 100 mJ AS T = 25 C 60 C Maximum Power Dissipation P W D T = 25 C 3.7 A c, e Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 400 H, R = 25 , I = 17 A (see fig. 12). DD J g AS c. I 17 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRFZ24, SiHFZ24 data and test conditions. S16-0013-Rev. D, 18-Jan-16 Document Number: 90366 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ24S, SiHFZ24S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA a (PCB mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.061 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 10 A - - 0.10 DS(on) GS D d Forward Transconductance g V = 25 V, I = 10 A 5.5 - - S fs DS D Dynamic Input Capacitance C - 640 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 360- pF oss DS d f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -79- rss Total Gate Charge Q -- 25 g I = 17 A, V = 48 V, D DS Gate-Source Charge Q --V = 10 V 5.8 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -13 - d(on) Rise Time t -58 - r V = 30 V, I = 17 A, DD D ns b, c R = 18 , R = 1.7 , see fig. 10 Turn-Off Delay Time t -2g D 5- d(off) Fall Time t -42- f Internal Source Inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 17 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 68 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 17 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 88 180 ns rr b, c T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.29 0.64 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Uses IRFZ24/SiHFZ24 data and test conditions. S16-0013-Rev. D, 18-Jan-16 Document Number: 90366 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000