X-On Electronics has gained recognition as a prominent supplier of IRFZ44ELPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFZ44ELPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFZ44ELPBF Infineon

IRFZ44ELPBF electronic component of Infineon
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See Product Specifications
Part No.IRFZ44ELPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO262
Datasheet: IRFZ44ELPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8574 ea
Line Total: USD 0.86 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8574

   
Manufacturer
Product Category
Technology
Case
Polarisation
Mounting
Type Of Transistor
Drain-Source Voltage
Drain Current
Power Dissipation
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We are delighted to provide the IRFZ44ELPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFZ44ELPBF and other electronic components in the MOSFETs category and beyond.

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The IRFZ44ELPBF is a neodymium-iron-boron power MOSFET produced by Infineon Technologies. This type of MOSFET is a highly efficient and compact device used in switching applications such as DC/DC or inverters where fast switching performance is needed. It has an installation to height of 0.3mm, a drain source voltage (VDSS) of 60V, a drain-gate voltage of 20V and a maximum drain current (IDS) of 34A. The maximum power dissipation (PD) is 70W and the maximum junction temperature is 175°C. The maximum gate charge (QG) is 140 nC and the gate resistance (Rg) is 5 ohms.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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