IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology V (V) 60 DS Available Ultra Low On-Resistance R ()V = 10 V 0.028 DS(on) GS RoHS* Dynamic dV/dt Rating COMPLIANT Q (Max.) (nC) 67 175 C Operating Temperature g Fast Switching Q (nC) 18 gs Fully Avalanche Rated Q (nC) 25 gd Drop in Replacement of the IRFZ44, SiHFZ44 for Configuration Single Linear/Audio Applications Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a S D wide variety of applications. G S The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation N-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFZ44RPbF Lead (Pb)-free SiHFZ44R-E3 IRFZ44R SnPb SiHFZ44R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS e Continuous Drain Current T = 25 C 50 C V at 10 V I GS D Continuous Drain Current T = 100 C 36 A C a Pulsed Drain Current I 200 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 100 mJ AS Maximum Power Dissipation T = 25 C P 150 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 44 H, R = 25 , I = 51 A (see fig. 12). DD J g AS c. I 51 A, dV/dt 250 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Current limited by the package, (die current = 51 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91292 www.vishay.com S11-0517-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFZ44R, SiHFZ44R Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 -- 100nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 31 A -- 0.028 DS(on) GS D b Forward Transconductance g V = 25 V, I = 31 A 15 - - S fs DS D Dynamic Input Capacitance C - 1900 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 920- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -170- rss Total Gate Charge Q -- 67 g I = 51 A, V = 48 V, D DS Gate-Source Charge Q --V = 10 V 18 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --25 gd Turn-On Delay Time t -14 - d(on) Rise Time t - 110 - r V = 30 V, I = 51 A, DD D ns b Turn-Off Delay Time t -4R = 9.1 , R = 0.55 , see fig. 105- d(off) g D Fall Time t -92- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol c D Continuous Source-Drain Diode Current I -- 50 S showing the A integral reverse G a Pulsed Diode Forward Current I - - 200 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 51 A, V = 0 V -- 2.5 SD J S GS V Body Diode Reverse Recovery Time t - 120 180 rr ns b T = 25 C, I = 51 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.53 0.80 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Current limited by the package (die current = 51 A). www.vishay.com Document Number: 91292 2 S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000