PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ44ES) D V = 60V DSS Low-profile through-hole (IRFZ44EL) 175C Operating Temperature R = 0.023 DS(on) Fast Switching G Fully Avalanche Rated I = 48A D Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die 2 D Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest 2 possible on-resistance in any existing surface mount package. The D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 48 D C GS I T = 100C Continuous Drain Current, V 10V 34 A D C GS I Pulsed Drain Current 192 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 220 mJ AS I Avalanche Current 29 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 IRFZ44ES/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D DV /DT Breakdown Voltage Temp. Coefficient 0.063 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.023 V = 10V, I = 29A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 15 S V = 30V, I = 29A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 60 I = 29A g D Q Gate-to-Source Charge 13 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 23 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 30V d(on) DD t Rise Time 60 I = 29A r D ns t Turn-Off Delay Time 70 R = 15 d(off) G t Fall Time 70 R = 1.1, See Fig. 10 f D Between lead, L Internal Source Inductance nH S and center of die contact C Input Capacitance 1360 V = 0V iss GS C Output Capacitance 420 pF V = 25V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 48 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 192 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 29A, V = 0V SD J S GS t Reverse Recovery Time 69 104 ns T = 25C, I = 29A rr J F Q Reverse Recovery Charge 177 266 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Uses IRFZ44E data and test conditions Starting T = 25C, L = 520H J R = 25, I = 29A. (See Figure 12) G AS I 29A di/d 320A/s, V V , SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note AN-994. 2 www.irf.com