IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 60 Definition DS Advanced Process Technology R ( )V = 10 V 0.018 DS(on) GS Dynamic dV/dt Q (Max.) (nC) 110 g 175 C Operating Temperature Q (nC) 29 gs Fast Switching Q (nC) 36 gd Fully Avalanche Rated Configuration Single Drop in Replacement of the IRFZ48, SiHFZ48 for Linear/Audio Applications D Compliant to RoHS Directive 2002/95/EC DESCRIPTION 2 2 D PAK (TO-263) I PAK (TO-262) Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that G D Power MOSFETs are well known for, provides the designer S D S with an extremely efficient and reliable device for use in a G wide variety of applications. S 2 The D PAK is a surface mount power package capable of N-Channel MOSFET accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and Halogen-free SiHFZ48RS-GE3 - IRFZ48RSPbF IRFZ48RLPbF Lead (Pb)-free SiHFZ48RS-E3 SiHFZ48RL-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 50 C e Continuous Drain Current V at 10 V I GS D T = 100 C A 50 C a, e Pulsed Drain Current I 290 DM Linear Derating Factor W/C 1.3 b, e Single Pulse Avalanche Energy E 100 mJ AS Maximum Power Dissipation T = 25 C P 190 W C D c, e Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, Starting T = 25 C, L = 22 H, R = 25 , I = 72 A (see fig. 12). DD J g AS c. I 72 A, dI/dt 200 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Current limited by the package, (die current = 72 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91296 www.vishay.com S11-1054-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -0.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 43 A - - 0.018 DS(on) GS D b Forward Transconductance g V = 25 V, I = 43 A 27 - - S fs DS D Dynamic Input Capacitance C - 2400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 1300- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -190- rss Total Gate Charge Q - - 110 g I = 72 A, V = 48 V, D DS Gate-Source Charge Q --V = 10 V 29 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --36 gd Turn-On Delay Time t -8.1 - d(on) Rise Time t - 250 - r V = 30 V, I = 72 A, DD D ns b, c R = 9.1 , R = 0.34 , see fig. 10 g D Turn-Off Delay Time t -210- d(off) Fall Time t -250- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol c Continuous Source-Drain Diode Current I -- 50 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 290 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 72 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 120 180 ns rr b, c T = 25 C, I = 72 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.50 0.80 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Current limited by the package, (die current = 72 A). www.vishay.com Document Number: 91296 2 S11-1054-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000