SMPS MOSFET HEXFET Power MOSFET Applications V R max (m I DSS DS(on) D High Frequency Isolated DC-DC 30V 3.0 V = 10V 260A GS Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power 100% R Tested G Benefits Ultra-Low Gate Impedance 2 TO-220AB D Pak TO-262 Very Low R at 4.5V V DS(on) GS IRL3713PbF IRL3713SPbF IRL3713LPbF Fully Characterized Avalanche Voltage and Current Lead-Free Base Part Number Standard Pack Package Type Orderable Part Number Form Quantity IRL3713PbF TO-220 Tube 50 IRL3713PbF IRL3713SLPbF TO-262 Tube 50 IRL3713SLPbF Tube 50 IRL3713SPbF 2 IRL3713SPbF Tape and Reel Left 800 IRL3713STRLPbF D Pak Tape and Reel Right 800 IRL3713STRRPbF Absolute Maximum Ratings Symbol Parameter Max Units V Drain-Source Voltage 30 V DS V GS Gate-to-Source Voltage 20 V Continuous Drain Current, V 10V 260 I T = 25C GS D C I T = 100C Continuous Drain Current, V 10V 180 GS A D C I 1040 DM Pulsed Drain Current P T = 25C 330 Maximum Power Dissipation D C W P Tc = 100C 170 D Maximum Power Dissipation Linear Derating Factor 2.2 W/C T , T Junction and Storage Temperature Range -55 to +175 C J STG Thermal Resistance Symbol Parameter Typ Max Units Junction-to-Case R JC 0.45* Case-to-Sink, Flat, Greased Surface R qCS 0.50 C/W R Junction-to-Ambient 62 JA Junction-to-Ambient (PCB Mount) R JA 40 2 * R (end of life) for D Pak and TO-262 = 0.50C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min Typ Max Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250 A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.027 V/C Reference to 25C, I = 1mA D 2.6 3.0 V = 10V, I = 38A GS D R m Static Drain-to-Source On-Resistance DS(on) 3.3 4.0 V = 4.5V, I = 30A GS D V GS(th) Gate Threshold Voltage 1.0 2.5 V V = V , I = 250 A DS GS D 50 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current 20 A V = 24V, V = 0V DSS DS GS 100 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min Typ Max Units Conditions gfs Forward Transconductance 76 S V = 15V, I = 30A DS D Q g Total Gate Charge 75 110 I = 30A D Q Gate-to-Source Charge 24 nC V = 15V gs DS Q gd Gate-to-Drain Mille) Charge 37 V = 4.5V GS Q Output Gate Charge 61 92 V = 0V, V = 15V OSS GS DS R G Gate Resistance 0.5 3.4 t d(on) Turn-On Delay Time 16 V = 15V DD t Rise Time 160 I = 30A r D ns t d(off) Turn-Off Delay Time 40 R = 1.8 G t f Fall Time 57 V = 4.5V GS C Input Capacitance 5890 V = 0V iss GS C oss Output Capacitance 3130 pF V = 15V DS C Reverse Transfer Capacitance 630 = 1.0MHz rss Avalanche Characteristics Parameter Typ Max Units Symbol E Single Pulse Avalanche Energy 1530 mJ AS I Avalanche Current 46 A AR Diode Characteristics Symbol Parameter Min Typ Max Units Conditions Continuous Source Current MOSFET symbol I 260 A S (Body Diode) showing the Pulsed Source Current integral reverse I 1040 SM (Body Diode) p-n junction diode. 0.80 1.3 T = 25C, I = 30A, V = 0V J S GS V Diode Forward Voltage V SD 0.68 T = 125C, I = 30A, V = 0V J S GS t Reverse Recovery Time 75 110 ns T = 25C, I = 30A, V = 0V rr R J F di/dt = 100A/s Q Reverse Recovery Charge 140 210 nC rr t Reverse Recovery Time 78 120 ns T = 125C, I = 30A, V = 20V rr J F R di/dt = 100A/s Q Reverse Recovery Charge 160 240 nC rr