PD - 94992A IRFZ48VPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating V = 60V DSS 175C Operating Temperature Fast Switching R = 12m DS(on) Fully Avalanche Rated G Optimized for SMPS Applications I = 72A D Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 72 D C GS I T = 100C Continuous Drain Current, V 10V 51 A D C GS I Pulsed Drain Current 290 DM P T = 25C Power Dissipation 150 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 166 mJ AS I Avalanche Current 72 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 5.3 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.0 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 IRFZ48VPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12.0 m V = 10V, I = 43A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 35 S V = 25V, I = 43A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 110 I = 72A g D Q Gate-to-Source Charge 29 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 36 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.6 V = 30V d(on) DD t Rise Time 200 I = 72A r D ns t Turn-Off Delay Time 157 R = 9.1 d(off) G t Fall Time 166 R = 0.34 , See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 1985 V = 0V iss GS C Output Capacitance 496 V = 25V oss DS C Reverse Transfer Capacitance 91 pF = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 72 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 290 (Body Diode) p-n junction diode. S V Diode Forward Voltage 2.0 V T = 25C, I = 72A, V = 0V SD J S GS t Reverse Recovery Time 70 100 ns T = 25C, I = 72A rr J F Q Reverse Recovery Charge 155 233 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by I 72A di/d 151A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J Pulse width 300s duty cycle 2%. Starting T = 25C, L = 64H J R = 25 , I = 72A. (See Figure 12) G AS 2 www.irf.com