IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ()V = 5.0 V 0.077 DS(on) GS RoHS* Logic-Level Gate Drive COMPLIANT Q (Max.) (nC) 64 g R Specified at V = 4 V and 5 V DS(on) GS Q (nC) 9.4 gs 175 C Operating Temperature Q (nC) 27 gd Fast Switching Configuration Single Ease of Paralleling D Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D G S commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL540PbF Lead (Pb)-free SiHL540-E3 IRL540 SnPb SiHL540 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 28 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 20 A C a Pulsed Drain Current I 110 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 440 mJ AS a Avalanche Current I 28 A AR a Repetitive Avalanche Energy E 15 mJ AR Maximum Power Dissipation T = 25 C P 150 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 841 H, R = 25 , I = 28 A (see fig. 12c). DD J g AS c. I 28 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91300 www.vishay.com S11-0519-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL540, SiHL540 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greasd Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 17 A - - 0.077 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 14 A - - 0.11 GS D Forward Transconductance g V = 50 V, I = 17 A 12 - - S fs DS D Dynamic Input Capacitance C - 2200 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 560- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -140- rss Total Gate Charge Q -- 64 g = 28 A, V = 80 V, I D DS Gate-Source Charge Q --V = 5.0 V 9.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --27 gd Turn-On Delay Time t -8.5 - d(on) Rise Time t - 170 - r V = 50 V, I = 28 A, DD D ns b Turn-Off Delay Time t -3R = 9.0 , R = 1.7 , see fig. 105- d(off) g D Fall Time t -80- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 28 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 110 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 28 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 200 260 ns rr b T = 25 C, I = 28 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 1.7 2.90 C rr Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) Forward Turn-On Time t on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91300 2 S11-0519-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000