X-On Electronics has gained recognition as a prominent supplier of IRL630STRRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL630STRRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL630STRRPBF Vishay

IRL630STRRPBF electronic component of Vishay
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Part No.IRL630STRRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET N-Chan 200V 9.0 Amp
Datasheet: IRL630STRRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.025 ea
Line Total: USD 3.02 
Availability - 776
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
776
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.025
10 : USD 2.211
100 : USD 1.683
250 : USD 1.474
500 : USD 1.298
800 : USD 1.243
2400 : USD 1.221
4800 : USD 1.188
9600 : USD 1.166

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the IRL630STRRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL630STRRPBF and other electronic components in the MOSFETs category and beyond.

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IRL630S, SiHL630S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G Logic-level gate drive Available R specified at V = 4 V and 5 V DS(on) GS 150 C operating temperature D G Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 200 DS DESCRIPTION R ( )V = 5 V 0.40 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 40 g designer with the best combination of fast switching, Q (nC) 5.5 gs ruggedized device design, low on-resistance and cost-effectiveness. Q (nC) 24 gd 2 The D PAK (TO-263) is a surface-mount power package Configuration Single capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHL630S-GE3 SiHL630STRR-GE3 SiHL630STRL-GE3 a a Lead (Pb)-free IRL630SPbF IRL630STRRPbF IRL630STRLPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source Voltage V 10 GS T = 25 C 9.0 C Continuous drain current V at 5 V I GS D T = 100 C 5.7 A C a Pulsed drain current I 36 DM Linear derating factor 0.59 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 250 mJ AS a Avalanche current I 9.0 A AR a Repetitive avalanche energy E 7.4 mJ AR Maximum power dissipation T = 25 C 74 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.1 A c Peak diode recovery dv/dt dv/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 4.6 mH, R = 25 , I = 9.0 A (see fig. 12) DD J g AS c. I 9.0 A, di/dt 120 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0684-Rev. D, 07-Sep-2020 Document Number: 90390 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRL630S, SiHL630S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 5.4 A - - 0.40 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 4.5 A - - 0.50 GS D b Forward transconductance g V = 50 V, I = 5.4 A 4.8 - - S fs DS D Dynamic Input capacitance C - 1100 - iss V = 0 V, GS Output capacitance C -V = 25 V, 220- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -70- rss Total gate charge Q -- 40 g I = 9.0 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 5.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --24 gd Turn-on delay time t -8.0 - d(on) Rise time t -57 - r V = 100 V, I = 9.0 A, DD D ns b R = 6.0 , R = 11 , see fig. 10 g D Turn-off delay time t -38- d(off) Fall time t -33- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 9.0 S showing the A integral reverse G a Pulsed diode forward current I -- 36 p - n junction diode SM S b Body diode voltage V T = 25 C, I = 9.0 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 230 350 ns rr b T = 25 C, I = 9.0 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -1.7 2.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90390 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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