IRLD024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating HVMDIP For automatic insertion End stackable G Logic-level gate drive R dpecified at V = 4 V and 5 V DS(on) GS S G 175 C operating temperature S D Fast switching N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay provide the R ()V = 5.0 V 0.10 DS(on) GS designer with the best combination of fast switching, Q (Max.) (nC) 18 g ruggedized device design, low on-resistance and Q (nC) 4.5 gs cost-effectiveness. Q (nC) 12 gd The 4 pin DIP package is a low cost machine-insertiable Configuration Single case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP Lead (Pb)-free IRLD024PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 2.5 A Continuous drain current V at 5.0 V I GS D T = 100 C 1.8 A A a Pulsed drain current I 20 DM Linear derating factor 0.0083 W/C b Single pulse avalanche energy E 91 mJ AS Maximum power dissipation T = 25 C P 1.3 W A D c Peak diode recovery dV/dt dV/dt 4.5 V/ns Operating junction and storage temperature range T , T - 55 to + 175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 16 mH, R = 25 , I = 2.5 A (see fig. 12) DD J g AS c. I 17 A, dI/dt 140 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0886-Rev. D, 30-Aug-2021 Document Number: 91308 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLD024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 1.5A - - 0.10 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 1.3 A - - 0.14 GS D b Forward Transconductance g V = 25 V, I = 1.5 A 3.7 - - S fs DS D Dynamic Input Capacitance C - 870 - iss V = 0 V GS Output Capacitance C -V = 25 V 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -53- rss Total Gate Charge Q -- 18 g I = 17 A, V = 48 V D DS Gate-Source Charge Q --V = 5.0 V 4.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --12 gd Turn-On Delay Time t -11 - d(on) Rise Time t - 110 - r V = 30 V, I = 17 A DD D ns b R = 9.0 , R = 1.7 , see fig. 10 g D Turn-Off Delay Time t -23- d(off) Fall Time t -41- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 2.5 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 20 SM S b Body Diode Voltage V T = 25 C, I = 2.5 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 110 260 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.49 1.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0886-Rev. D, 30-Aug-2021 Document Number: 91308 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000