IRLI640G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G Logic-level gate drive R specified at V = 4 V and 5 V DS(on) GS Fast switching SS S Ease of paralleling DD G Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provides the V (V) 200 DS designer with the best combination of fast switching, R ()V = 5.0 V 0.18 DS(on) GS ruggedized device design, low on-resistance and cost effectiveness. Q (Max.) (nC) 66 g The TO-220 FULLPAK eliminates the need for additiona l Q (nC) 9.0 gs insulating hardware in commercial-industrial applications. Q (nC) 38 gd The molding compound used provides a high isolation capability and a low thermal resistance between the tab and Configuration Single external heatsink. This isolation is equivalent to using a 10 0 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLI640GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 10 GS T = 25 C 9.9 C Continuous drain current V at 5.0 V I GS D T = 100 C 6.3 A C a Pulsed drain current I 40 DM Linear derating factor 0.32 W/C b Single pulse avalanche energy E 290 mJ AS a Repetitive avalanche current I 9.9 A AR a Repetitive avalanche energy E 4.0 mJ AR Maximum power dissipation T = 25 C P 40 W C D c Peak diode recovery dV/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 4.4 mH, R = 25 , I = 9.9 A (see fig. 12) DD J G AS c. I 17 A, dI/dt 150 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0473-Rev. B, 17-May-2021 Document Number: 91314 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLI640G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.1 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 160 C - - 250 DS GS J b V = 5.0 V I = 5.9 A - - 0.18 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 5.0 A - - 0.27 GS D b Forward transconductance g V = 50 V, I = 10 A 16 - - S fs DS D Dynamic Input capacitance C - 1800 - iss V = 0 V, GS Output capacitance C -V = 25 V, 400- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -120- rss Total gate charge Q -- 66 g I = 17 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 9.0 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --38 gd Turn-on delay time t -8.0 - d(on) V = 100 V, I = 17 A, Rise time t DD D -83 - r R = 4.6 R = 5.7 , ns G , D Turn-off delay time t -4 b 4- d(off) see fig. 10 Fall time t -52- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 9.9 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 40 SM S b Body diode voltage V T = 25 C, I = 9.9 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 310 470 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -3.2 4.8 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0473-Rev. B, 17-May-2021 Document Number: 91314 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000