HEXFET Power MOSFET V 20 V DS V 12 V GS R DS(on) max 45 m ( V = 4.5V) GS R DS(on) max 62 m ( V = 2.5V) GS I D 3.4 A ( T = 25C) c(Bottom) 2mm x 2mm Dual PQFN Applications Features and Benefits Features Resulting Benefits Low R ( 45m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 19C/W) Enable better thermal dissipation Low Profile ( 1.0mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRLHS6276TRPBF PQFN Dual 2mm x 2mm Tape and Reel 4000 IRLHS6276TR2PBF PQFN Dual 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V 4.5 A GS D I T = 70C Continuous Drain Current, V 4.5V 3.6 GS D A I T = 25C Continuous Drain Current, V 4.5V 9.6 GS D C(Bottom) A I T = 100C Continuous Drain Current, V 4.5V 6.1 C(Bottom) GS D 4.5V (Package Limited) 3.4 I T = 25C Continuous Drain Current, V C(Bottom) GS D Pulsed Drain Current I 40 DM Power Dissipation P T = 25C 1.5 D A W Power Dissipation P T = 25C 6.6 C(Bottom) D 0.012 Linear Derating Factor W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 9.3 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 33 45 V = 4.5V, I = 3.4A DS(on) GS D m 46 62 V = 2.5V, I = 3.4A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 10A DS GS D V Gate Threshold Voltage Coefficient -3.8 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 16V, V = 0V DSS DS GS A 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 8.8 S V = 10V, I = 3.4A DS D Q 3.1 V = 10V g Total Gate Charge DS Q 0.22 nC V = 4.5V gs Gate-to-Source Charge GS Q 1.3 I = 3.4A (See Fig.17 & 18) gd Gate-to-Drain Charge D R Gate Resistance 4.0 G t Turn-On Delay Time 4.4 V = 10V, V = 4.5V d(on) DD GS t ID = 3.4A Rise Time 9.3 r ns t Turn-Off Delay Time 10 R =1.8 d(off) G t Fall Time 4.9 See Fig.15 f C Input Capacitance 310 V = 0V iss GS C Output Capacitance 79 pF V = 10V oss DS C Reverse Transfer Capacitance 49 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 9.6 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 40 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 3.4A , V = 0V SD J S GS t Reverse Recovery Time 5.2 7.8 ns T = 25C, I = 3.4A , V = 10V rr J F DD Q Reverse Recovery Charge 5.0 7.5 nC di/dt = 126A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 19 JC Junction-to-Case R (Top) 175 C/W JC Junction-to-Ambient R 86 JA Junction-to-Ambient R (<10s) 69 JA Repetitive rating pulse width limited by max. junction temperature. Current limited by package. Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing.