X-On Electronics has gained recognition as a prominent supplier of IRLIZ14GPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLIZ14GPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLIZ14GPBF Vishay

IRLIZ14GPBF electronic component of Vishay
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See Product Specifications
Part No.IRLIZ14GPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 60V 8.0 Amp
Datasheet: IRLIZ14GPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.98 ea
Line Total: USD 1.98 
Availability - 594
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 31
Multiples : 1
31 : USD 1.04
150 : USD 1.014
500 : USD 0.988
2000 : USD 0.936

96
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 8.9436
10 : USD 7.7891
50 : USD 1.7212
100 : USD 1.1316

594
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.98
10 : USD 1.243
100 : USD 1.1
250 : USD 1.0263
500 : USD 0.946
1000 : USD 0.8899
2000 : USD 0.8855
5000 : USD 0.8503

1794
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 50
50 : USD 0.9482
100 : USD 0.9389
500 : USD 0.9294
1000 : USD 0.9201
2000 : USD 0.9109
5000 : USD 0.9017

   
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We are delighted to provide the IRLIZ14GPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLIZ14GPBF and other electronic components in the MOSFETs category and beyond.

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IRLIZ14G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G Logic-level gate drive R specified at V = 4 V and 5 V DS(on) GS SS S Fast switching DD G N-Channel MOSFET Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY V (V) 60 DESCRIPTION DS R ()V = 5.0 V 0.20 DS(on) GS Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, Q (Max.) (nC) 8.4 g ruggedized device design, low on-resistance and Q (nC) 3.5 gs cost-effectiveness. Q (nC) 6.0 gd The TO-220 FULLPAK eliminates the need for additional Configuration Single insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLIZ14GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT 60 Drain-source voltage V DS V Gate-source voltage 10 V GS 8.0 T = 25 C C Continuous drain current V at 5.0 V I GS D 5.7 A T = 100 C C a Pulsed drain current 32 I DM 0.18 Linear derating factor W/C b 39.5 Single pulse avalanche energy E mJ AS 27 Maximum power dissipation T = 25 C P W C D c 4.5 Peak diode recovery dV/dt dV/dt V/ns Operating junction and storage temperature range -55 to +175 T , T J stg C d 300 Soldering recommendations (peak temperature) For 10 s 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 0.79 mH, R = 25 , I = 10 A (see fig. 12) DD J G AS c. I 10 A, dI/dt 90 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0473-Rev. C, 17-May-2021 Document Number: 91315 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLIZ14G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -5.5 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.070 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 4.8 A - - 0.20 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 4.0 A - - 0.28 GS D b Forward transconductance g V = 25 V, I = 4.8 A 3.6 - - S fs DS D Dynamic Input capacitance C - 400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -42- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 8.4 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 5.0 V 3.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --6.0 gd Turn-on delay time t -9.3 - d(on) V = 30 V, I = 10 A, Rise time t DD D - 110 - r R = 12 R = 2.8 , ns G , D b Turn-off delay time t -17- d(off) see fig. 10 Fall time t -26- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 8.0 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 32 SM S b Body diode voltage V T = 25 C, I = 8.0 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 65 130 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.33 0.65 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0473-Rev. C, 17-May-2021 Document Number: 91315 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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