IRLMS6702TRPBF Infineon

IRLMS6702PbF HEXFET Power MOSFET A 1 6 D D V = -20V DSS 2 5 D D 3 4 G S R = 0.20 DS(on) Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R DS(on) 60% less than a similar size SOT-23. This package is Micro6 ideal for applications where printed circuit board space is at a premium. It s unique thermal design and R DS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. % & ( ) * + ) , - . / ) - 0 - 1 ) + 2 / 3 / 4 5 2 2 1 ) 26 777 777 % www.irf.com 1 + ) 8 . 777 777 9 8 . 2 :: ) 777 777 / : ) 2 777 777 / + ) + ) B / ) 777 777 < * = = 777 777 9 ( ) ) ) 777 777 + < 777 777 + ) & . 9 777 777 * + ) ( & . 777 777 * + ) / - & . 777 777 > * = 777 < < < > * + ) = 777 < > * 4 A = 777 + ( B 0 2 777 777 / 2 777 777 B:: 0 2 777 777 / ( 2 777 < 777 / , + ( ) ) 777 777 B ) ) 777 777 ( / - : ) ) 777 777 C 4DE + ( % D + ) 4B+(F 026 777 777 8 0 A = = G + ) - 777 777 8 0 A G ) S ( 777 777 / - / ) - 0 2 777 > / - / ) - 0 = 777 9 / - H = 2 60 = 9 H 0 )0) I 2 5 G ) 2 + : A I 9 + : ) 2 (/ 6 ) SD 2 www.irf.com