IRLM120A Advanced Power MOSFET FEATURES BV = 100 V DSS n Avalanche Rugged Technology R = 0.22 DS(on) n Rugged Gate Oxide Technology n Lower Input Capacitance I = 2.3 A D n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 A(Max.) V = 100V DS 2 n Lower R : 0.176 (Typ.) DS(ON) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage 100 V DSS o Continuous Drain Current (T =25 C) 2.3 C I A D o Continuous Drain Current (T =70 C) 1.85 C I Drain Current-Pulsed (1) 18 A DM V Gate-to-Source Voltage 20 V GS E Single Pulsed Avalanche Energy (2) 105 mJ AS I Avalanche Current (1) 2.3 A AR E Repetitive Avalanche Energy (1) 0.27 mJ AR dv/dt Peak Diode Recovery dv/dt (3) 6.5 V/ns o Total Power Dissipation (T =25 C) * 2.7 W C P D o Linear Derating Factor * 0.022 W/ C Operating Junction and T , T - 55 to +150 J STG Storage Temperature Range o C Maximum Lead Temp. for Soldering 300 T L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units o R Junction-to-Ambient * -- 46.3 C/W JA * When mounted on the minimum pad size recommended (PCB Mount). 1N-CHANNEL IRLM120A POWER MOSFET o Electrical Characteristics (T =25 C unless otherwise specified) C Symbol Characteristic Min. Typ. Max. Units Test Condition BV V V =0V,I =250 A DSS Drain-Source Breakdown Voltage 100 -- -- GS D o BV/ T I =250 A See Fig 7 J Breakdown Voltage Temp. Coeff. V/ C -- 0.09 -- D V V V =5V,I =250 A GS(th) Gate Threshold Voltage 1.0 -- 2.0 DS D V =20V Gate-Source Leakage , Forward -- -- 100 GS I nA GSS V =-20V Gate-Source Leakage , Reverse -- -- -100 GS V =100V -- -- 10 DS I Drain-to-Source Leakage Current DSS A o V =80V,T =125 C -- -- 100 DS C Static Drain-Source R V =5V,I =1.15A (4) -- -- 0.22 DS(on) GS D On-State Resistance g -- V =40V,I =1.15A (4) Forward Transconductance 4.6 -- fs DS D C Input Capacitance -- 340 440 iss V =0V,V =25V,f =1MHz GS DS C -- Output Capacitance 90 115 oss pF See Fig 5 C Reverse Transfer Capacitance -- 39 50 rss t -- Turn-On Delay Time 5 20 d(on) V =50V,I =9.2A, DD D t Rise Time -- 10 30 r R =9 ns G t -- Turn-Off Delay Time 19 50 d(off) See Fig 13 (4)(5) t Fall Time -- 9 30 f Q -- Total Gate Charge 10.2 15 V =80V,V =5V, g DS GS Q Gate-Source Charge -- 1.7 -- nC I =9.2A gs D Q -- Gate-Drain (Miller) Charge 6.0 -- See Fig 6 & Fig 12 (4)(5) gd Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition I Continuous Source Current -- -- 2.3 Integral reverse pn-diode S A I Pulsed-Source Current (1) -- -- 18 in the MOSFET SM o V Diode Forward Voltage (4) V -- -- 1.5 T =25 C,I =2.3A,V =0V SD J S GS o t Reverse Recovery Time ns -- 98 -- T =25 C,I =9.2A rr J F Q Reverse Recovery Charge C -- 0.34 -- di /dt=100A/ s (4) rr F Notes Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature o L=30mH, I =2.3A, V =25V, R =27 , Starting T =25 C AS DD G J o I < 9.2A, di/dt < 300A/s, V < BV , Starting T =25 C SD DD DSS J Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% Essentially Independent of Operating Temperature 2