ISL9K3060G3 ON Semiconductor

STEALTH Dual Diode 60 A, 600 V ISL9K3060G3 Description The ISL9K3060G3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. www.onsemi.com The STEALTH family exhibits low reverse recovery current (I ) RR and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low CATHODE ANODE 2 (BOTTOM SIDE METAL) I and short ta phase reduce loss in switching transistors. The soft CATHODE RR ANODE 1 recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. TO2473LD CASE 340CK Features Stealth Recovery t = 36 ns ( I = 30 A) rr F K Max Forward Voltage, V = 2.4 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is PbFree and is RoHS Compliant A A 1 2 Applications Switch Mode Power Supplies MARKING DIAGRAM Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Y&Z&3&K K3060G3 Snubber Diode Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code K3060G3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: February, 2020 Rev. 3 ISL9K3060G3/DISL9K3060G3 DEVICE MAXIMUM RATINGS (per leg) (T = 25C unless otherwise noted) C Parameter Symbol Ratings Unit Repetitive Peak Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 125C) I 30 A C F(AV) Total Device Current (Both Legs) 60 A Repetitive Peak Surge Current (20 kHz Square Wave) I 70 A FRM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) I 325 A FSM Power Dissipation P 200 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to +175 C J, STG Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s T 260 C PKG Package Body for 10 s, See Techbrief TB334 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9K3060G3 K3060G3 TO2473L Tube N/A 30 THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance Junction to Case R 1.0 C/W JC Thermal Resistance Junction to Ambient TO247 30 C/W R JA www.onsemi.com 2