STEALTH Diode 18 A, 1200 V ISL9R18120G2, ISL9R18120S3S Description The ISL9R18120G2, ISL9R18120S3S is aSTEALTH diode www.onsemi.com optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery ANODE current (I ) and exceptionally soft recovery under typical operating CATHODE RR CATHODE (BOTTOM SIDE conditions. This device is intended for use as a free wheeling or boost METAL) diode in power supplies and other power switching applications. Y&Z&3&K The low I and short ta phase reduce loss in switching transistors. R18120G2 RR The soft recovery minimizes ringing, expanding the range TO2472LD of conditions under which the diode may be operated without the use CASE 340CL of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. CATHODE (FLANGE) Features Y&Z&3&K Stealth Recovery t = 300 ns ( I = 18 A) rr F R18120S3S N/C Max Forward Voltage, V = 3.3 V ( T = 25C) F C ANODE 1200 V Reverse Voltage and High Reliability 2 Avalanche Energy Rated D PAK3 (TO263, 3LEAD) CASE 418AJ These Devices are PbFree and are RoHS Compliant Applications MARKING DIAGRAM Hard Switched PFC Boost Diode Y = ON Semiconductor Logo UPS Free Wheeling Diode &Z = Assembly Plant Code Motor Drive FWD &3 = Numeric Date Code &K = Lot Code SMPS FWD R18120G2, Snubber Diode R18120S3S = Specific Device Code SYMBOL K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2020 Rev. 3 ISL9R18120S3S/DISL9R18120G2, ISL9R18120S3S DEVICE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Parameter Symbol Ratings Unit Repetitive Peak Reverse Voltage V 1200 V RRM Working Peak Reverse Voltage V 1200 V RWM DC Blocking Voltage V 1200 V R Average Rectified Forward Current (T = 92C) I 18 A C F(AV) Repetitive Peak Surge Current (20 kHz Square Wave) I 36 A FRM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) I 200 A FSM Power Dissipation P 125 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to +175 C J, STG Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s T 260 C PKG Package Body for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9R18120G2 R18120G2 TO2472LD Tube N/A 30 2 ISL9R18120S3ST R18120S3S TO2633LD (D PAK) Reel 24 mm 800 THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance Junction to Case R TO247, TO263 1.0 C/W JC Thermal Resistance Junction to Ambient R TO247 30 C/W JA Thermal Resistance Junction to Ambient R TO263 62 C/W JA www.onsemi.com 2