STEALTH Diode 15 A, 600 V ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S Description The ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S is a STEALTH www.onsemi.com diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse ANODE recovery current (I ) and exceptionally soft recovery under typical CATHODE rr CATHODE (BOTTOM SIDE operating conditions. This device is intended for use as a free wheeling METAL) or boost diode in power supplies and other power switching Y&Z&3&K applications. The low I and short ta phase reduce loss in switching R1560G2 rr transistors. The soft recovery minimizes ringing, expanding the range TO2472LD of conditions under which the diode may be operated without the use CASE 340CL of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power ANODE density design at lower cost. CATHODE Features Y&Z&3&K Stealth Recovery t = 29.4 ns ( I = 15 A) R1560P2 rr F CATHODE Max Forward Voltage, V = 2.2 V ( T = 25C) (FLANGE) F C 600 V Reverse Voltage and High Reliability TO2202LD CASE 340BA Avalanche Energy Rated CATHODE These Devices are PbFree and are RoHS Compliant (FLANGE) Applications Y&Z&3&K SMPS N/C R1560S3S Hard Switched PFC Boost Diode ANODE UPS Free Wheeling Diode 2 D PAK3 (TO263, 3LEAD) CASE 418AJ Motor Drive FWD SMPS FWD Snubber Diode MARKING DIAGRAM Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code R1560G2, R1560P2, R1560S3S = Specific Device Code SYMBOL K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2020 Rev. 4 ISL9R1560S3S/DISL9R1560G2, ISL9R1560P2, ISL9R1560S3S DEVICE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Parameter Symbol Ratings Unit Repetitive Peak Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 145C) I 15 A C F(AV) Repetitive Peak Surge Current (20 kHz Square Wave) I 30 A FRM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) I 200 A FSM Power Dissipation P 150 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to +175 C J, STG Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s T 260 C PKG Package Body for 10 s, See Techbrief TB334 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Reel Size Tape Width Quantity ISL9R1560G2 R1560G2 TO2472LD Tube N/A N/A 30 ISL9R1560P2 R1560P2 TO2202LD Tube N/A N/A 50 2 ISL9R1560S3ST R1560S3S TO263(D PAK) Reel 13 dia 24 mm 800 THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance Junction to Case R 1.0 C/W JC Thermal Resistance Junction to Ambient R TO247 30 C/W JA Thermal Resistance Junction to Ambient R TO220 62 C/W JA Thermal Resistance Junction to Ambient R TO263 62 C/W JA www.onsemi.com 2