CMXD2004 SURFACE MOUNT www.centralsemi.com TRIPLE ISOLATED DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CMXD2004 SILICON SWITCHING DIODES type contains three (3) Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for applications requiring high voltage capability. MARKING CODE: X04 SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 240 V R Peak Repetitive Reverse Voltage V 300 V RRM Average Forward Current I 200 mA O Continuous Forward Current I 225 mA F Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNIT I V=240V 100 nA R R I V =240V, T=150C 100 A R R A BV I=100A 300 V R R V I=100mA 1.0 V F F C V =0, f=1.0MHz 5.0 pF T R t I =I =30mA, I =3.0mA, R=100 50 ns rr F R rr L R4 (9-February 2010)CMXD2004 SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X04 R4 (9-February 2010) www.centralsemi.com