ISL9R30120G2 ON Semiconductor

STEALTH Diode 30 A, 1200 V ISL9R30120G2 Description The ISL9R30120G2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (I ) RR www.onsemi.com and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and short ta phase reduce loss in switching transistors. The soft RR CATHODE recovery minimizes ringing, expanding the range of conditions under (BOTTOM SIDE ANODE which the diode may be operated without the use of additional snubber METAL) circuitry. Consider using the STEALTH diode with an SMPS IGBT CATHODE to provide the most efficient and highest power density design at lower cost. TO2472LD CASE 340CL Features Stealth Recovery t = 269 ns ( I = 30 A) rr F SYMBOL Max Forward Voltage, V = 3.3 V ( T = 25C) F C 1200 V Reverse Voltage and High Reliability K Avalanche Energy Rated This Device is PbFree and is RoHS Compliant Applications Switch Mode Power Supplies Hard Switched PFC Boost Diode A UPS Free Wheeling Diode Motor Drive FWD MARKING DIAGRAM SMPS FWD Snubber Diode Y&Z&3&K R30120G2 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code R30120G2 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2020 Rev. 3 ISL9R30120G2/DISL9R30120G2 DEVICE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage V 1200 V RRM Working Peak Reverse Voltage V 1200 V RWM DC Blocking Voltage V 1200 V R Average Rectified Forward Current (T = 80C) I 30 A C F(AV) Repetitive Peak Surge Current (20 kHz Square Wave) I 70 A FRM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) I 325 A FSM Power Dissipation P 166 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to C J, STG +175 Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s T 260 C PKG Package Body for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9R30120G2 R30120G2 TO2472LD Tube N/A 30 THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction to Case R 0.75 C/W JC Thermal Resistance, Junction to Ambient R 30 C/W JA www.onsemi.com 2