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I =15A ) The ISL9R1560P2 F085 is a Stealth diode with soft rr F recovery characteristics (trr < 30ns). It has a low forward- Low Forward Voltage( V =2.2V(Max.) I =15A ) F F voltage drop and is of silicon nitride passivated, ion- Avalanche Energy Rated implanted, epitaxial construction. This device is intended for use as a freewheel/clamping AEC-Q101 Qualified diode in various automotive switching power supplies Applications and other power switching applications. Its low stored charge as well as Stealth and soft recov- Automotive DCDC Converter ery characteristics minimize ringing and electrical noise Automotive On Board Charger while reduce the overall power loss. Switching Power Supply Power Switching Circuits Pin Assignments 1 2 1. Cathode 2. Anode Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current T = 25 C15 A F(AV) C I Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) 45 A FSM E Avalanche Energy (1A, 40mH) 20 mJ AVL T T Operating Junction and Storage Temperature - 55 to +175 C J, STG Thermal Characteristics T = 25C unless otherwise noted C Symbol Parameter Max Units R Maximum Thermal Resistance, Junction to Case 0.93 C/W JC R Maximum Thermal Resistance, Junction to Ambient 62 C/W JA Package Marking and Ordering Information Device Marking Device Package Tube Quantity ISL9R1560P2 ISL9R1560P2 F085 TO-220AC - 50 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com ISL9R1560P2 F085 Rev. C1