X-On Electronics has gained recognition as a prominent supplier of IRLL110PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLL110PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLL110PBF Vishay

IRLL110PBF electronic component of Vishay
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Part No.IRLL110PBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 100V 1.5 Amp
Datasheet: IRLL110PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 0.3218 ea
Line Total: USD 12.87 
Availability - 0
MOQ: 40  Multiples: 80
Pack Size: 80
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9278
10 : USD 0.9345
50 : USD 0.6779
100 : USD 0.5684
250 : USD 0.4756

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 40
Multiples : 80
40 : USD 0.3218
300 : USD 0.296
1000 : USD 0.2509
2500 : USD 0.2239

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 320
Multiples : 80
320 : USD 0.2444
480 : USD 0.2343

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRLL110PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLL110PBF and other electronic components in the MOSFETs category and beyond.

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IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 100 Available in tape and reel DS Dynamic dV/dt rating R ( )V = 5.0 V 0.54 DS(on) GS Repetitive avalanche rated Q (Max.) (nC) 6.1 g Logic-level gate drive Q (nC) 2.6 gs Available R specified at V = 4 V and 5 V DS(on) GS Q (nC) 3.3 gd Fast switching Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, SOT-223 ruggedized device design, low on-resistance and D G cost-effectiveness. The SOT-223 package is designed for surface-mounting S using vapor phase, infrared, or wave soldering techniques. D G Its unique package design allows for easy automatic S pick-and-place as with other SOT or SOIC packages but Marking code: LB has the added advantage of improved thermal performance N-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION SOT-223 SOT-223 Package Tube Tape and Reel Lead (Pb)-free and Halogen-free - SiHLL110TR-GE3 a Lead (Pb)-free IRLL110PbF IRLL110TRPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 1.5 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 0.93 A C a Pulsed Drain Current I 12 DM Linear Derating Factor 0.025 W/C e Linear Derating Factor (PCB Mount) 0.017 b Single Pulse Avalanche Energy E 50 mJ AS a Repetitive Avalanche Current I 1.5 A AR a Repetitive Avalanche Energy E 0.31 mJ AR Maximum Power Dissipation T = 25 C 3.1 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.0 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 25 mH, R = 25 , I = 1.5 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S15-1195-Rev. F, 25-May-15 Document Number: 91320 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLL110, SiHLL110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -60 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 0.90 A - - 0.54 GS D Drain-Source On-State Resistance R DS(on) V = 4.0 V I = 0.75 A - - 0.76 GS D Forward Transconductance g V = 25 V, I = 0.90 A 0.57 - - S fs DS D Dynamic Input Capacitance C - 250 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 6.1 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 5.0 V 2.6 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.3 gd Turn-On Delay Time t -9.3 - d(on) Rise Time t -47 - r V = 50 V, I = 5.6 A, DD D ns R = 12 , R = 8.4 g D Turn-Off Delay Time t -16- d(off) Fall Time t -18- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 12 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 110 130 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.50 0.65 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-1195-Rev. F, 25-May-15 Document Number: 91320 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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