IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 100 Available in tape and reel DS Dynamic dV/dt rating R ( )V = 5.0 V 0.54 DS(on) GS Repetitive avalanche rated Q (Max.) (nC) 6.1 g Logic-level gate drive Q (nC) 2.6 gs Available R specified at V = 4 V and 5 V DS(on) GS Q (nC) 3.3 gd Fast switching Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, SOT-223 ruggedized device design, low on-resistance and D G cost-effectiveness. The SOT-223 package is designed for surface-mounting S using vapor phase, infrared, or wave soldering techniques. D G Its unique package design allows for easy automatic S pick-and-place as with other SOT or SOIC packages but Marking code: LB has the added advantage of improved thermal performance N-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION SOT-223 SOT-223 Package Tube Tape and Reel Lead (Pb)-free and Halogen-free - SiHLL110TR-GE3 a Lead (Pb)-free IRLL110PbF IRLL110TRPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 1.5 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 0.93 A C a Pulsed Drain Current I 12 DM Linear Derating Factor 0.025 W/C e Linear Derating Factor (PCB Mount) 0.017 b Single Pulse Avalanche Energy E 50 mJ AS a Repetitive Avalanche Current I 1.5 A AR a Repetitive Avalanche Energy E 0.31 mJ AR Maximum Power Dissipation T = 25 C 3.1 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.0 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 25 mH, R = 25 , I = 1.5 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S15-1195-Rev. F, 25-May-15 Document Number: 91320 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLL110, SiHLL110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -60 thJA a (PCB Mount) C/W Maximum Junction-to-Case (Drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 0.90 A - - 0.54 GS D Drain-Source On-State Resistance R DS(on) V = 4.0 V I = 0.75 A - - 0.76 GS D Forward Transconductance g V = 25 V, I = 0.90 A 0.57 - - S fs DS D Dynamic Input Capacitance C - 250 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 6.1 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 5.0 V 2.6 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.3 gd Turn-On Delay Time t -9.3 - d(on) Rise Time t -47 - r V = 50 V, I = 5.6 A, DD D ns R = 12 , R = 8.4 g D Turn-Off Delay Time t -16- d(off) Fall Time t -18- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 12 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 110 130 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.50 0.65 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-1195-Rev. F, 25-May-15 Document Number: 91320 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000