IRLL024NTRPbF Surface Mount HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance V 55V DSS Dynamic dv/dt Rating R 0.065 DS(on) Fast Switching Fully Avalanche Rated I 3.1A D Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. SOT-223 The SOT-223 package is designed for surface-mount using vapor G D S phase, infra red, or wave soldering techniques. Its unique Gate Drain Source package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLL024NTRPbF SOT-223 Tape and Reel 2500 IRLL024NTRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V ** 4.4 GS D A Continuous Drain Current, V 10V * I T = 25C 3.1 D A GS A I T = 70C Continuous Drain Current, V 10V * 2.5 D A GS I Pulsed Drain Current 12 DM Maximum Power Dissipation (PCB Mount) ** P T = 25C 2.1 D A W P T = 25C Maximum Power Dissipation (PCB Mount) * 1.0 D A Linear Derating Factor (PCB Mount) * 8.3 mW/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 120 mJ AS I Avalanche Current 3.1 A AR E Repetitive Avalanche Energy * 0.1 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient (PCB Mount, steady state) * 90 120 R JA C/W R Junction-to-Ambient (PCB Mount, steady state) ** 50 60 JA * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. 1 2019-01-28 IRLL024NTRPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.048 V/C Reference to 25C, I = 1mA V /T (BR)DSS J D 0.065 V = 10V, I = 3.1A GS D R Static Drain-to-Source On-Resistance 0.080 V = 5.0V, I = 2.5A DS(on) GS D 0.100 V = 4.0V, I = 1.6A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 3.3 S V = 25V, I = 1.9A DS D 25 V = 55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 10.4 15.6 I = 1.9A g D Q Gate-to-Source Charge 1.5 2.3 nC V = 44V gs DS Q Gate-to-Drain Charge 5.5 8.3 V = 5.0V , See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.4 V = 28V d(on) DD t Rise Time 21 I = 1.9A r D ns t Turn-Off Delay Time 18 R = 24 d(off) G t Fall Time 25 R = 15 See Fig. 10 f D C Input Capacitance 510 V = 0V iss GS C Output Capacitance 140 pF V = 25V oss DS C Reverse Transfer Capacitance 58 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 3.1 S (Body Diode) showing the A Pulsed Source Current integral reverse I 12 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C,I = 1.9A,V = 0V SD J S GS t Reverse Recovery Time 39 58 ns T = 25C ,I = 1.9A rr J F Q Reverse Recovery Charge 63 94 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) starting T = 25C, L = 25mH, R = 25, I = 3.1A (See fig. 12) J G AS I 1.9A, di/dt 270A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. 2 2019-01-28