X-On Electronics has gained recognition as a prominent supplier of IRLR024TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR024TRPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR024TRPBF Vishay

Hot IRLR024TRPBF electronic component of Vishay
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Part No.IRLR024TRPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRLR024TR
Datasheet: IRLR024TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9734 ea
Line Total: USD 0.97 
Availability - 114
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
114
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9734
10 : USD 0.8588
25 : USD 0.8501
100 : USD 0.5884

2342
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4145
10 : USD 0.9626
100 : USD 0.7026
500 : USD 0.6578
1000 : USD 0.6532

114
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 13
Multiples : 1
13 : USD 0.8588
25 : USD 0.8501
100 : USD 0.5884

   
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We are delighted to provide the IRLR024TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR024TRPBF and other electronic components in the MOSFETs category and beyond.

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IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 60 DS Surface mount (IRLR024, SiHLR024) R ( )V = 5.0 V 0.10 DS(on) GS Straight lead (IRLU024, SiHLU024) Q (Max.) (nC) 18 g Available in tape and reel Q (nC) 4.5 gs Available Logic-level gate drive Q (nC) 12 gd R specified at V = 4 V and 5 V DS(on) GS Configuration Single Fast switching D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION D Third generation power MOSFETs from Vishay provide the D G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S G S cost-effectiveness. D G The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free - SiHLR024TRL-GE3 SiHLR024TR-GE3 SiHLU024-GE3 a IRLR024PbF - IRLR024TRPbF IRLU024PbF Lead (Pb)-free a SiHLR024-E3 - SiHLR024T-E3 SiHLU024-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS T = 25 C 14 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 9.2 A C a Pulsed Drain Current I 56 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 53 mJ AS Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 541 H, R = 25 , I = 14 A (see fig. 12). DD J g AS c. I 17 A, dI/dt 140 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S14-1677-Rev. E, 18-Aug-14 Document Number: 91322 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.068 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 8.4 A - - 0.10 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 7.0 A - - 0.14 GS D b Forward Transconductance g V = 25 V, I = 8.4 A 7.3 - - S fs DS D Dynamic Input Capacitance C - 870 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -53- rss Total Gate Charge Q -- 18 g I = 17 A, V = 48 V, D DS Gate-Source Charge Q --V = 5.0 V 4.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --12 gd Turn-On Delay Time t -11 - d(on) Rise Time t - 110 - r V = 30 V, I = 17 A, DD D ns b R = 9.0 , R = 1.7 , see fig. 10 Turn-Off Delay Time t -2g D 3- d(off) Fall Time t -41- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 14 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 56 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 260 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.75 1.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-1677-Rev. E, 18-Aug-14 Document Number: 91322 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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