X-On Electronics has gained recognition as a prominent supplier of IRLR120PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR120PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR120PBF Vishay

Hot IRLR120PBF electronic component of Vishay
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Part No.IRLR120PBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 100V 7.7 Amp
Datasheet: IRLR120PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13: USD 1.0069 ea
Line Total: USD 13.09 
Availability - 19
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5895
10 : USD 0.9759
100 : USD 0.9116
500 : USD 0.8079

2628
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6608
10 : USD 0.9497
100 : USD 0.8293
500 : USD 0.7602
1000 : USD 0.72
3000 : USD 0.719
9000 : USD 0.7178

19
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 13
Multiples : 1
13 : USD 1.0069
100 : USD 0.9405
500 : USD 0.8336

   
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We are delighted to provide the IRLR120PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR120PBF and other electronic components in the MOSFETs category and beyond.

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IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt Rating Repetitive Avalanche Rated DPAK IPAK (TO-252) (TO-251) Surface Mount (IRLR120, SiHLR120) D D Straight Lead (IRLU120, SiHLU120) G Available Available in Tape and Reel S Logic-Level Gate Drive S G D G R Specified at V = 4 V and 5 V DS(on) GS S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, V (V) 100 DS ruggedized device design, low on-resistance and R ( )V = 5.0 V 0.27 DS(on) GS cost-effectiveness. Q (Max.) (nC) 12 g The DPAK is designed for surface mounting using vapor Q (nC) 3.0 gs phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole Q (nC) 7.1 gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR120-GE3 SiHLR120TRL-GE3 SiHLR120TR-GE3 SiHLR120TRR-GE3 SiHLU120-GE3 a a a IRLR120PbF IRLR120TRLPbF IRLR120TRPbF IRLR120TRRPbF IRLU120PbF Lead (Pb)-free a a a SiHLR120-E3 SiHLR120TL-E3 SiHLR120T-E3 SiHLR120TR-E3 SiHLU120-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 10 GS T = 25 C 7.7 C Continuous drain current V at 5.0 V I GS D T = 100 C 4.9 A C a Pulsed drain current I 31 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 210 mJ AS a Repetitive avalanche current I 7.7 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 5.3 mH, R = 25 , I = 7.7 A (see fig. 12) DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0397-Rev. E, 25-May-2020 Document Number: 91324 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 4.6 A - - 0.27 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 3.9 A - - 0.38 GS D b Forward transconductance g V = 50 V, I = 4.6 A 4.4 - - S fs DS D Dynamic Input capacitance C - 490 - iss V = 0 V, GS Output capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -30- rss Total gate charge Q -- 12 g I = 9.2 A, V = 80 V, D DS Gate-source charge Q --V = 5.0 V 3.0 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.1 gd Turn-on delay time t -9.8 - d(on) Rise time t -64 - r V = 50 V, I = 9.2 A, DD D ns b R = 9.0 , R = 5.2 , see fig. 10 g D Turn-off delay time t -21- d(off) Fall time t -27- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c Internal source inductance L die contact -7.5 - S S Gate input resistance Rg f = 1 Mhz, open drain 0.6 1.3 2.6 Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 7.7 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 31 SM S b Body diode voltage V T = 25 C, I = 7.7 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 110 140 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.80 1.0 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0397-Rev. E, 25-May-2020 Document Number: 91324 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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