X-On Electronics has gained recognition as a prominent supplier of IRLR120NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR120NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR120NPBF Infineon

IRLR120NPBF electronic component of Infineon
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See Product Specifications
Part No.IRLR120NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Datasheet: IRLR120NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.4254
10 : USD 1.4502
100 : USD 0.9647
500 : USD 0.7146
1000 : USD 0.5488
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Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 1.1397
100 : USD 0.8518
500 : USD 0.6265
1000 : USD 0.4819
N/A

Obsolete
0
MOQ : 75
Multiples : 75
75 : USD 0.5296
450 : USD 0.487
1500 : USD 0.4565
N/A

Obsolete
0
MOQ : 75
Multiples : 75
75 : USD 0.5296
450 : USD 0.487
1500 : USD 0.4565
N/A

Obsolete
0

Multiples : 3000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1088
10 : USD 0.9186
100 : USD 0.5935
1000 : USD 0.4751
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9139
3 : USD 0.5421
7 : USD 0.3419
86 : USD 0.321
N/A

Obsolete
0
MOQ : 107
Multiples : 1
107 : USD 0.3181
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRLR120NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR120NPBF and other electronic components in the MOSFETs category and beyond.

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HEXFET Power MOSFET Surface Mount (IRLR120N) Straight Lead (IRLU120N) D Advanced Process Technology V = 100V DSS Fast Switching Fully Avalanche Rated R = 0.185 DS(on) Lead-Free G Description I = 10A D S + %& ( ) * * + ,- + . / 0 D-Pak I-Pak 1 2 * Standard Pack Base Part Number Package Type Orderable Part Number Note Form Quantity Tube 75 IRLR120NPbF Tape and Reel 2000 IRLR120NTRPbF IRLR120NPbF D-Pak Tape and Reel Left 3000 IRLR120NTRLPbF Tape and Reel Right 3000 IRLR120NTRRPbF EOL notice 289 IRLU120NPbF IPak Tube 75 IRLU120NPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 10 D C GS I T = 100C Continuous Drain Current, V 10V 7.0 A D C GS I Pulsed Drain Current 35 DM P T = 25C Power Dissipation 48 W D C Linear Derating Factor 0.32 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 85 mJ AS I Avalanche Current 6.0 A AR E Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.1 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA 1 3415 + ( 6 * 7 3415 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.185 V = 10V, I = 6.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.225 V = 5.0V, I = 6.0A GS D 0.265 V = 4.0V, I = 5.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250 A GS(th) DS GS D g Forward Transconductance 3.1 S V = 25V, I = 6.0A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 20 I = 6.0A g D Q Gate-to-Source Charge 4.6 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 10 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 4.0 V = 50V d(on) DD t Rise Time 35 I = 6.0A r D ns t Turn-Off Delay Time 23 R = 11, V = 5.0V d(off) G GS t Fall Time 22 R = 8.2, See Fig. 10 f D D Between lead, L Internal Drain Inductance 888 4.5 888 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 440 V = 0V iss GS C Output Capacitance 97 pF V = 25V oss DS C Reverse Transfer Capacitance 50 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 10 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 35 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 6.0A, V = 0V SD J S GS t Reverse Recovery Time 110 160 ns T = 25C, I =6.0A rr J F Q Reverse RecoveryCharge 410 620 nC di/dt = 100A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300 s duty cycle 2%. max. junction temperature. ( See fig. 11 ) V = 25V, starting T = 25C, L = 4.7mH This is applied for I-PAK, L of D-PAK is measured between lead and DD J S R = 25, I = 6.0A. (See Figure 12) center of die contact G AS I 6.0A, di/dt 340A/ s, V V , Uses IRL520N data and test conditions. SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 3 3415 + ( 6 * 7 3415

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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