HEXFET Power MOSFET Surface Mount (IRLR120N) Straight Lead (IRLU120N) D Advanced Process Technology V = 100V DSS Fast Switching Fully Avalanche Rated R = 0.185 DS(on) Lead-Free G Description I = 10A D S + %& ( ) * * + ,- + . / 0 D-Pak I-Pak 1 2 * Standard Pack Base Part Number Package Type Orderable Part Number Note Form Quantity Tube 75 IRLR120NPbF Tape and Reel 2000 IRLR120NTRPbF IRLR120NPbF D-Pak Tape and Reel Left 3000 IRLR120NTRLPbF Tape and Reel Right 3000 IRLR120NTRRPbF EOL notice 289 IRLU120NPbF IPak Tube 75 IRLU120NPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 10 D C GS I T = 100C Continuous Drain Current, V 10V 7.0 A D C GS I Pulsed Drain Current 35 DM P T = 25C Power Dissipation 48 W D C Linear Derating Factor 0.32 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 85 mJ AS I Avalanche Current 6.0 A AR E Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.1 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA 1 3415 + ( 6 * 7 3415 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.185 V = 10V, I = 6.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.225 V = 5.0V, I = 6.0A GS D 0.265 V = 4.0V, I = 5.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250 A GS(th) DS GS D g Forward Transconductance 3.1 S V = 25V, I = 6.0A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 20 I = 6.0A g D Q Gate-to-Source Charge 4.6 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 10 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 4.0 V = 50V d(on) DD t Rise Time 35 I = 6.0A r D ns t Turn-Off Delay Time 23 R = 11, V = 5.0V d(off) G GS t Fall Time 22 R = 8.2, See Fig. 10 f D D Between lead, L Internal Drain Inductance 888 4.5 888 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 440 V = 0V iss GS C Output Capacitance 97 pF V = 25V oss DS C Reverse Transfer Capacitance 50 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 10 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 35 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 6.0A, V = 0V SD J S GS t Reverse Recovery Time 110 160 ns T = 25C, I =6.0A rr J F Q Reverse RecoveryCharge 410 620 nC di/dt = 100A/ s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300 s duty cycle 2%. max. junction temperature. ( See fig. 11 ) V = 25V, starting T = 25C, L = 4.7mH This is applied for I-PAK, L of D-PAK is measured between lead and DD J S R = 25, I = 6.0A. (See Figure 12) center of die contact G AS I 6.0A, di/dt 340A/ s, V V , Uses IRL520N data and test conditions. SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 3 3415 + ( 6 * 7 3415