X-On Electronics has gained recognition as a prominent supplier of IRLZ24LPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLZ24LPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLZ24LPBF Vishay

IRLZ24LPBF electronic component of Vishay
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Part No.IRLZ24LPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 60V 17 Amp
Datasheet: IRLZ24LPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2921 ea
Line Total: USD 1.29 
Availability - 377
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
377
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2921
10 : USD 1.0066
100 : USD 0.9442
500 : USD 0.8761

377
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 9
Multiples : 1
9 : USD 0.8761

   
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We are delighted to provide the IRLZ24LPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLZ24LPBF and other electronic components in the MOSFETs category and beyond.

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IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L www.vishay.com Vishay Siliconix Power MOSFET FEATURES Surface-mount D Available in tape and reel 2 2 I PAK (TO-262) D PAK (TO-263) Dynamic dv/dt rating Available Logic-level gate drive R specified at V = 4 V and 5 V DS (on) GS Available G 175C operating temperature Fast switching Material categorization: for definitions of compliance D G S please see www.vishay.com/doc 99912 D S S G Note * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, R ( )V = 5 V 0.10 DS(on) GS ruggedized device design, low on-resistance and Q max. (nC) 18 g cost-effectiveness. Q (nC) 4.5 gs 2 The D PAK is a surface-mount power package capable of Q (nC) 12 gd accommodating die sizes up to HEX-4. It provides the Configuration Single highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. The through-hole version (IRLZ24L, SiHLZ24L) is available for low profile application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and halogen-free SiHLZ24S-GE3 SiHLZ24L-GE3 Lead (Pb)-free IRLZ24SPbF IRLZ24LPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 17 C Continuous drain current V at 5 V I GS D T = 100 C 12 A C a Pulsed drain current I 68 DM Linear derating factor 0.40 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 110 mJ AS Maximum power dissipation T = 25 C 60 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 444 H, R = 25 , I = 17 A (see fig. 12) DD J g AS c. I 17 A, di/dt 140 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0684-Rev. D, 07-Sep-2020 Document Number: 90416 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 10 A - - 0.10 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 8.5 A - - 0.14 GS D b Forward transconductance g V = 25 V, I = 10 A 7.3 - - S fs DS D Dynamic Input capacitance C - 870 - iss V = 0 V, GS Output capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -53- rss Total gate charge Q -- 18 g I = 17 A, V = 48 V, D DS Gate-source charge Q --V = 5 V 4.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --12 gd Turn-on delay time t -11 - d(on) Rise time t - 110 - r V = 30 V, I = 17 A, DD D ns b R = 9 , R = 1.7 , see fig. 10 g D Turn-off delay time t -23- d(off) Fall time t -41- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 17 S showing the A G integral reverse a Pulsed diode forward current I -- 68 S SM p - n junction diode b Body diode voltage V T = 25 C, I = 17 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 110 260 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.49 1.5 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90416 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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