PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET Power MOSFET Logic Level D Advanced Process Technology V = 55V DSS Ultra Low On-Resistance 175C Operating Temperature R = 58m DS(on) Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 16A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make D-Pak I-Pak this design an extremely efficient and reliable device IRLR024ZPbF IRLU024ZPbF for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) GS 16 D C Continuous Drain Current, V 10V I T = 100C 11 A GS D C I Pulsed Drain Current 64 DM P T = 25C Power Dissipation 35 W D C Linear Derating Factor 0.23 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy AS (Thermally limited) 25 mJ E (Tested ) Single Pulse Avalanche Energy Tested Value AS 25 I Avalanche Current AR See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 4.28 JC R Junction-to-Ambient (PCB mount) JA 40 C/W R Junction-to-Ambient JA 110 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA D 46 58 V = 10V, I = 9.6A GS D m R DS(on) Static Drain-to-Source On-Resistance 80 V = 5.0V, I = 5.0A GS D 100 V = 4.5V, I = 3.0A GS D V GS(th) Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 7.4 S V = 25V, I = 9.6A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 16V GSS GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q g Total Gate Charge 6.6 9.9 I = 5.0A D Q Gate-to-Source Charge 1.6 nC V = 44V gs DS Q gd Gate-to-Drain Mille) Charge 3.9 V = 5.0V GS t Turn-On Delay Time 8.2 V = 28V d(on) DD t Rise Time 43 I = 5.0A r D t d(off) Turn-Off Delay Time 19 ns R = 28 G t Fall Time 16 V = 5.0V f GS L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 380 V = 0V GS C Output Capacitance 62 V = 25V oss DS C rss Reverse Transfer Capacitance 39 pF = 1.0MHz C Output Capacitance 180 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 50 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 81 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 16 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 64 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 9.6A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 9.6A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 11 17 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com