X-On Electronics has gained recognition as a prominent supplier of IRLZ14SPBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRLZ14SPBF MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRLZ14SPBF Vishay

IRLZ14SPBF electronic component of Vishay
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See Product Specifications
Part No.IRLZ14SPBF
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET N-Chan 60V 10 Amp
Datasheet: IRLZ14SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.518 ea
Line Total: USD 1.52

Availability - 1896
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1794
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.5525
10 : USD 1.265
100 : USD 1.0327
500 : USD 0.8809
1000 : USD 0.8211
2000 : USD 0.7015
5000 : USD 0.7015
10000 : USD 0.675
25000 : USD 0.6739

   
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We are delighted to provide the IRLZ14SPBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLZ14SPBF and other electronic components in the MOSFET category and beyond.

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IRLZ14S, SiHLZ14S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology 2 D PAK (TO-263) Surface-mount Available 175 C operating temperature G Fast switching Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D G S S Note * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay utilize R ( )V = 5 V 0.20 DS(on) GS advanced processing techniques to achieve extremely low Q max. (nC) 8.4 g on-resistance per silicon area. This benefit, combined with Q (nC) 3.5 gs the fast switching speed and ruggedized device design that Q (nC) 6.0 gd power MOSFETs are well known for, provides the designer Configuration Single with an extremely efficient reliable device for use in a wide variety of applications. 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHLZ14S-GE3 SiHLZ14STRL-GE3 SiHLZ14STRR-GE3 a a Lead (Pb)-free IRLZ14SPbF IRLZ14STRLPbF IRLZ14STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT e Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 10 C Continuous drain current V at 5 V I GS D T = 100 C 7.2 A C a, e Pulsed drain current I 40 DM Linear derating factor 0.29 W/C b, e Single pulse avalanche energy E 68 mJ AS T = 25 C 43 C Maximum power dissipation P W D T = 25 C 3.7 A c, e Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 790 H, R = 25 , I = 10 A (see fig. 12) DD J g AS c. I 10 A, di/dt 90 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. Uses IRLZ14, SiHLZ14 data and test conditions S20-0684-Rev. D, 07-Sep-2020 Document Number: 90414 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLZ14S, SiHLZ14S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA a (PCB mount) C/W Maximum junction-to- case (drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.07 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 6.0 A -- 0.2 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 5.0 A - - 0.28 GS D Forward transconductance g V = 25 V, I = 6.0 A 3.5 - - S fs DS D Dynamic Input capacitance C - 400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -42- rss Total gate charge Q -- 8.4 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 5 V 3.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --6.0 gd Turn-on delay time t -9.3 - d(on) Rise time t - 110 - r V = 30 V, I = 10 A, DD D ns b R = 12 , R = 2.8 , see fig. 10 Turn-off delay time t -1g D 7- d(off) Fall time t -26- f Internal source inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 10 S showing the A integral reverse G a I -- 40 Pulsed diode forward current p - n junction diode SM S b Body diode voltage V T = 25 C, I = 10 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 93 130 ns rr b T = 25 C, I = 10 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q - 340 650 nC rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90414 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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