IRLZ14S, SiHLZ14S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology 2 D PAK (TO-263) Surface-mount Available 175 C operating temperature G Fast switching Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D G S S Note * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay utilize R ( )V = 5 V 0.20 DS(on) GS advanced processing techniques to achieve extremely low Q max. (nC) 8.4 g on-resistance per silicon area. This benefit, combined with Q (nC) 3.5 gs the fast switching speed and ruggedized device design that Q (nC) 6.0 gd power MOSFETs are well known for, provides the designer Configuration Single with an extremely efficient reliable device for use in a wide variety of applications. 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHLZ14S-GE3 SiHLZ14STRL-GE3 SiHLZ14STRR-GE3 a a Lead (Pb)-free IRLZ14SPbF IRLZ14STRLPbF IRLZ14STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT e Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 10 C Continuous drain current V at 5 V I GS D T = 100 C 7.2 A C a, e Pulsed drain current I 40 DM Linear derating factor 0.29 W/C b, e Single pulse avalanche energy E 68 mJ AS T = 25 C 43 C Maximum power dissipation P W D T = 25 C 3.7 A c, e Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 790 H, R = 25 , I = 10 A (see fig. 12) DD J g AS c. I 10 A, di/dt 90 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. Uses IRLZ14, SiHLZ14 data and test conditions S20-0684-Rev. D, 07-Sep-2020 Document Number: 90414 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLZ14S, SiHLZ14S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA a (PCB mount) C/W Maximum junction-to- case (drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.07 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 6.0 A -- 0.2 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 5.0 A - - 0.28 GS D Forward transconductance g V = 25 V, I = 6.0 A 3.5 - - S fs DS D Dynamic Input capacitance C - 400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -42- rss Total gate charge Q -- 8.4 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 5 V 3.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --6.0 gd Turn-on delay time t -9.3 - d(on) Rise time t - 110 - r V = 30 V, I = 10 A, DD D ns b R = 12 , R = 2.8 , see fig. 10 Turn-off delay time t -1g D 7- d(off) Fall time t -26- f Internal source inductance L Between lead, and center of die contact - 7.5 - nH S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 10 S showing the A integral reverse G a I -- 40 Pulsed diode forward current p - n junction diode SM S b Body diode voltage V T = 25 C, I = 10 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 93 130 ns rr b T = 25 C, I = 10 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q - 340 650 nC rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90414 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000