IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck V R max Qg DSS DS(on) Converters for Computer Processor Power High Frequency Isolated DC-DC 3.1m 30V 39nC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance D-Pak I-Pak Fully Characterized Avalanche Voltage IRLR8743PbF IRLU8743PbF and Current GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 160 I T = 25C GS D C Continuous Drain Current, V 10V 113 I T = 100C GS A C D Pulsed Drain Current I 640 DM Maximum Power Dissipation P T = 25C 135 W D C Maximum Power Dissipation P T = 100C 68 C D Linear Derating Factor 0.90 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.11 JC Junction-to-Ambient (PCB Mount) R JA 50 C/W R JA Junction-to-Ambient 110 Notes through are on page 11 www.irf.com 1 08/15/07 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV 30 V V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage GS D V /T 20mV/C Reference to 25C, I = 1mA DSS J Breakdown Voltage Temp. Coefficient D R 2.4 3.1 V = 10V, I = 25A DS(on) Static Drain-to-Source On-Resistance GS D m 3.0 3.9 V = 4.5V, I = 20A GS D V GS(th) 1.35 1.9 2.35 V V = V , I = 100A Gate Threshold Voltage DS GS D V /T GS(th) J -6.4 mV/C Gate Threshold Voltage Coefficient I DSS 1.0 V = 24V, V = 0V Drain-to-Source Leakage Current DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I 100 V = 20V GSS Gate-to-Source Forward Leakage GS nA -100 V = -20V Gate-to-Source Reverse Leakage GS gfs 89 S V = 15V, I = 20A Forward Transconductance DS D Q g 39 59 Total Gate Charge Q gs1 10 V = 15V Pre-Vth Gate-to-Source Charge DS Q gs2 3.9 nC V = 4.5V Post-Vth Gate-to-Source Charge GS Q gd 13 I = 20A Gate-to-Drain Charge D Q godr 12 See Fig. 16 Gate Charge Overdrive Q 17 sw Switch Charge (Q + Q ) gs2 gd Q 21 nC V = 16V, V = 0V oss Output Charge DS GS R Gate Resistance 0.85 1.5 G t d(on) Turn-On Delay Time 19 V = 15V, V = 4.5V DD GS t r Rise Time 35 I = 20A D ns t d(off) 21 R = 1.8 Turn-Off Delay Time G t f 17 See Fig. 14 Fall Time C iss 4880 V = 0V Input Capacitance GS C oss 950 V = 15V Output Capacitance pF DS C rss 470 = 1.0MHz Reverse Transfer Capacitance Avalanche Characteristics Parameter Typ. Max. Units E 250 mJ AS Single Pulse Avalanche Energy I AR 20 A Avalanche Current E AR 13.5 mJ Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S MOSFET symbol Continuous Source Current 160 (Body Diode) showing the A I SM integral reverse Pulsed Source Current 640 (Body Diode) p-n junction diode. V 1.0 V T = 25C, I = 20A, V = 0V SD Diode Forward Voltage J S GS t 1827ns T = 25C, I = 20A, V = 15V rr Reverse Recovery Time J F DD Q di/dt = 300A/s rr 32 48 nC Reverse Recovery Charge t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time 2 www.irf.com