X-On Electronics has gained recognition as a prominent supplier of IRLU110PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLU110PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLU110PBF Vishay

Hot IRLU110PBF electronic component of Vishay
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See Product Specifications
Part No.IRLU110PBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 100V 4.3 Amp
Datasheet: IRLU110PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.162 ea
Line Total: USD 1.16 
Availability - 907
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1204
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.342
10 : USD 0.6985
100 : USD 0.6413
500 : USD 0.6017
1000 : USD 0.5918
9000 : USD 0.5907

907
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.162
5 : USD 0.56
25 : USD 0.504
45 : USD 0.385
122 : USD 0.364

1891
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 28
Multiples : 1
28 : USD 0.9257
100 : USD 0.8177
500 : USD 0.6941
1000 : USD 0.667
9000 : USD 0.6606

   
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We are delighted to provide the IRLU110PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLU110PBF and other electronic components in the MOSFETs category and beyond.

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IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 100 Definition DS Dynamic dV/dt Rating R ( )V = 5.0 V 0.54 DS(on) GS Repetitive Avalanche Rated Q (Max.) (nC) 6.1 g Surface Mount (IRLR110, SiHLR110) Q (nC) 2.0 gs Straight Lead (IRLU110, SiHLU110) Q (nC) 3.3 gd Available in Tape and Reel Configuration Single Logic-Level Gate Drive R Specified at V = 4 V and 5 V DS(on) GS D Compliant to RoHS Directive 2002/95/EC DPAK IPAK DESCRIPTION (TO-252) (TO-251) Third generation Power MOSFETs from Vishay provide the D designer with the best combination of fast switching, D G ruggedized device design, low on-resistance and cost-effectiveness. S G S The DPAK is designed for surface mounting using vapor D G phase, infrared, or wave soldering techniques. The straight S lead version (IRLU, SiHLU series) is for through-hole N-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR110-GE3 SiHLR110TR-GE3 SiHLR110TRL-GE3 SiHLU110-GE3 a IRLR110PbF IRLR110TRPbF IRLR110TRLPbF IRLU110PbF Lead (Pb)-free a SiHLR110-E3 SiHLR110T-E3 SiHLR110TL-E3 SiHLU110-E3 a a IRLR110 IRLR110TR IRLR110TRL IRLU110 SnPb a a SiHLR110TL SiHLU110 SiHLR110 SiHLR110T Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 4.3 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 2.7 A C a Pulsed Drain Current I 17 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 100 mJ AS a Repetitive Avalanche Current I 4.3 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C 25 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 8.1 mH, R = 25 , I = 4.3 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 140 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91323 www.vishay.com S10-1139-Rev. C, 17-May-10 1IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 2.6 A - - 0.54 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 2.2 A - - 0.76 GS D Forward Transconductance g V = 50 V, I = 2.6 A 2.3 - - S fs DS D Dynamic Input Capacitance C - 250 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 6.1 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 5.0 V 2.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.3 gd Turn-On Delay Time t -9.3 - d(on) Rise Time t -47 - r V = 50 V, I = 5.6 A, DD D ns b R = 12 , R = 8.4 , see fig. 10 g D Turn-Off Delay Time t -16- d(off) Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 4.3 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 17 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I =4.3 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 130 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.50 0.65 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91323 2 S10-1139-Rev. C, 17-May-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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