X-On Electronics has gained recognition as a prominent supplier of IRF7321D2TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7321D2TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7321D2TRPBF Infineon

IRF7321D2TRPBF electronic component of Infineon
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Part No.IRF7321D2TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT PCh wSchttky -4.9A 62mOhm 23nC
Datasheet: IRF7321D2TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.5221 ea
Line Total: USD 2088.4 
Availability - 0
MOQ: 4000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 4000
Multiples : 1
4000 : USD 0.5221

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
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We are delighted to provide the IRF7321D2TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7321D2TRPBF and other electronic components in the MOSFETs category and beyond.

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PD - 95297 IRF7321D2PbF FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K V = -30V DSS Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET 3 6 R = 0.062 Low V Schottky Rectifier S D DS(on) F Generation 5 Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.52V Lead-Free Top View Description TM The FETKY family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings ( T = 25C Unless Otherwise Noted) A Parameter Maximum Units I T = 25C Continuous Drain Current, V -10V -4.7 A D A GS I T = 70C -3.8 D A I Pulsed Drain Current -38 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Ratings Parameter Maximum Units R Junction-to-Ambient 62.5 C/W JA Notes: Repetitive rating pulse width limited by max. junction temperature (see fig. 11) I -2.9A, di/dt -77A/s, V V , T 150C SD DD (BR)DSS J Pulse width 300s duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com MOSFET Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D 0.042 0.062 V = -10V, I = -4.9A GS D 0.076 0.098 V = -4.5V, I = -3.6A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 7.7 S V = -15V, I = -4.9A fs DS D -1.0 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -24V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage 100 V = -20V GS Gate-to-Source Reverse Leakage -100 V = 20V GS Q Total Gate Charge 23 34 I = -4.9A g D Q Gate-to-Source Charge 3.8 5.7 nC V = -15V gs DS Q Gate-to-Drain Mille) Charge 5.9 8.9 V = -10V, See Fig. 6 gd GS t Turn-On Delay Time 13 19 V = -15V d(on) DD t Rise Time 13 20 I = -1.0A r D t Turn-Off Delay Time 34 51 R = 6.0 d(off) G t Fall Time 32 48 R = 15, f D C Input Capacitance 710 V = 0V iss GS C Output Capacitance 380 pF V = -25V oss DS C Reverse Transfer Capacitance 180 = 1.0MHz, See Fig. 5 rss MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current(Body Diode) -2.5 S I Pulsed Source Current (Body Diode) -30 SM V Body Diode Forward Voltage -0.78 -1.0 V T = 25C, I = -1.7A, V = 0V SD J S GS t Reverse Recovery Time (Body Diode) 44 66 ns T = 25C, I = -1.7A rr J F Q Reverse Recovery Charge 42 63 nC di/dt = 100A/s rr Schottky Diode Maximum Ratings Parameter Max. Units Conditions If (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25C 2.0 See Fig.14 Tc = 70C I Max. peak one cycle Non-repetitive 200 5s sine or 3s Rect. pulse Following any rated SM Surge current 20 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Parameter Max. Units Conditions Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25C 0.77 If = 6.0, Tj = 25C 0.52 If = 3.0, Tj = 125C 0.79 If = 6.0, Tj = 125C . Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25C 37 Tj = 125C Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25C dv/dt Max. Voltage Rate of Charge 4900 V/s Rated Vr ( HEXFET is the reg. TM for International Rectifier Power MOSFET s ) 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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