PD - 95297 IRF7321D2PbF FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K V = -30V DSS Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET 3 6 R = 0.062 Low V Schottky Rectifier S D DS(on) F Generation 5 Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.52V Lead-Free Top View Description TM The FETKY family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings ( T = 25C Unless Otherwise Noted) A Parameter Maximum Units I T = 25C Continuous Drain Current, V -10V -4.7 A D A GS I T = 70C -3.8 D A I Pulsed Drain Current -38 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Ratings Parameter Maximum Units R Junction-to-Ambient 62.5 C/W JA Notes: Repetitive rating pulse width limited by max. junction temperature (see fig. 11) I -2.9A, di/dt -77A/s, V V , T 150C SD DD (BR)DSS J Pulse width 300s duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com MOSFET Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D 0.042 0.062 V = -10V, I = -4.9A GS D 0.076 0.098 V = -4.5V, I = -3.6A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 7.7 S V = -15V, I = -4.9A fs DS D -1.0 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -24V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage 100 V = -20V GS Gate-to-Source Reverse Leakage -100 V = 20V GS Q Total Gate Charge 23 34 I = -4.9A g D Q Gate-to-Source Charge 3.8 5.7 nC V = -15V gs DS Q Gate-to-Drain Mille) Charge 5.9 8.9 V = -10V, See Fig. 6 gd GS t Turn-On Delay Time 13 19 V = -15V d(on) DD t Rise Time 13 20 I = -1.0A r D t Turn-Off Delay Time 34 51 R = 6.0 d(off) G t Fall Time 32 48 R = 15, f D C Input Capacitance 710 V = 0V iss GS C Output Capacitance 380 pF V = -25V oss DS C Reverse Transfer Capacitance 180 = 1.0MHz, See Fig. 5 rss MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current(Body Diode) -2.5 S I Pulsed Source Current (Body Diode) -30 SM V Body Diode Forward Voltage -0.78 -1.0 V T = 25C, I = -1.7A, V = 0V SD J S GS t Reverse Recovery Time (Body Diode) 44 66 ns T = 25C, I = -1.7A rr J F Q Reverse Recovery Charge 42 63 nC di/dt = 100A/s rr Schottky Diode Maximum Ratings Parameter Max. Units Conditions If (av) Max. Average Forward Current 3.2 50% Duty Cycle. Rectangular Wave, Tc = 25C 2.0 See Fig.14 Tc = 70C I Max. peak one cycle Non-repetitive 200 5s sine or 3s Rect. pulse Following any rated SM Surge current 20 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Parameter Max. Units Conditions Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25C 0.77 If = 6.0, Tj = 25C 0.52 If = 3.0, Tj = 125C 0.79 If = 6.0, Tj = 125C . Irm Max. Reverse Leakage current 0.30 Vr = 30V Tj = 25C 37 Tj = 125C Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25C dv/dt Max. Voltage Rate of Charge 4900 V/s Rated Vr ( HEXFET is the reg. TM for International Rectifier Power MOSFET s ) 2 www.irf.com