X-On Electronics has gained recognition as a prominent supplier of IRLSL3036PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLSL3036PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLSL3036PBF Infineon

IRLSL3036PBF electronic component of Infineon
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See Product Specifications
Part No.IRLSL3036PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO262
Datasheet: IRLSL3036PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1
1000 : USD 3.5608
10000 : USD 3.4423
100000 : USD 2.7367
500000 : USD 2.3511
1000000 : USD 2.3462
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 3.5613
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 4.1313
30 : USD 3.6808
100 : USD 3.1145
200 : USD 2.8443
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 9.2516
10 : USD 5.7204
100 : USD 4.9518
250 : USD 4.6998
500 : USD 4.221
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 5.1424
2 : USD 2.8555
10 : USD 2.7237
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the IRLSL3036PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLSL3036PBF and other electronic components in the MOSFETs category and beyond.

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97358 IRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET Applications D DC Motor Drive V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.9m DS(on) Uninterruptible Power Supply max. 2.4m High Speed Power Switching G I 270A Hard Switched and High Frequency Circuits D (Silicon Limited) S I 195A D (Package Limited) Benefits Optimized for Logic Level Drive Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness D G G Fully Characterized Capacitance and Avalanche 2 D Pak TO-262 SOA IRLS3036PbF IRLSL3036PbF Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 190 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I 1100 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 380 W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 16 V GS 8.0 dv/dt Peak Diode Recovery V/ns T Operating Junction and J -55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 290 mJ AS (Thermally limited) Avalanche Current I A AR See Fig. 14, 15, 22a, 22b Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units 11 R JC Junction-to-Case 0.40 C/W R 40 JA Junction-to-Ambient (PCB Mount, steady state) www.irf.com 1 12/08/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.061 V/C Reference to 25C, I = 5mA (BR)DSS J D 1.9 2.4 V = 10V, I = 165A GS D R Static Drain-to-Source On-Resistance m DS(on) 2.2 2.8 V = 4.5V, I = 140A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 2.0 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 340 S V = 10V, I = 165A DS D Q Total Gate Charge 91 140 I = 165A g D Q Gate-to-Source Charge 31 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 51 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 40 I = 165A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 66 V = 39V d(on) DD t Rise Time 220 I = 165A r D ns t Turn-Off Delay Time 110 R = 2.1 d(off) G t Fall Time 110 V = 4.5V f GS C Input Capacitance 11210 V = 0V iss GS C Output Capacitance 1020 V = 50V oss DS C Reverse Transfer Capacitance 500 pF = 1.0MHz rss C eff. (ER) 1430 V = 0V, V = 0V to 48V Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 1880 V = 0V, V = 0V to 48V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 270 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 165A, V = 0V SD J S GS t Reverse Recovery Time 62 T = 25C V = 51V, rr J R ns T = 125C I = 165A 66 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 310 rr J nC 360 T = 125C J I Reverse Recovery Current 4.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time as oss temperature Bond wire current limit is 195A. Note that current C while V is rising from 0 to 80% V . oss DS DSS limitation arising from heating of the device leds may occur with C eff. (ER) is a fixed capacitance that gives the same energy as oss some lead mounting arrangements. C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction When mounted on 1 square PCB (FR-4 or G-10 Material). For temperature. recommended footprint and soldering techniquea refer to applocation Limited by T , starting T = 25C, L = 0.021mH Jmax J note AN- 994 echniques refer to application note AN-994. R = 25 , I = 165A, V =10V. Part not recommended for use GS G AS above this value . I 165A, di/dt 430A/s, V V , T 175C. SD DD (BR)DSS J % 11 Pulse width 400s duty cycle 2%. % & 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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