X-On Electronics has gained recognition as a prominent supplier of IRLTS6342TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLTS6342TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLTS6342TRPBF Infineon

IRLTS6342TRPBF electronic component of Infineon
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See Product Specifications
Part No.IRLTS6342TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Datasheet: IRLTS6342TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1622 ea
Line Total: USD 486.6 
Availability - 11640
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1941
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5491
10 : USD 0.4355
25 : USD 0.4065
100 : USD 0.2964
250 : USD 0.2804
500 : USD 0.2314
1000 : USD 0.1534

8726
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.341
100 : USD 0.2299
500 : USD 0.1848
1000 : USD 0.1584
3000 : USD 0.1364
9000 : USD 0.1298

1438
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.546
50 : USD 0.3906
59 : USD 0.2926
161 : USD 0.2772
3000 : USD 0.2674

1941
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 59
Multiples : 1
59 : USD 0.4065
100 : USD 0.2964
250 : USD 0.2804
500 : USD 0.2314
1000 : USD 0.1534

5341
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 88
Multiples : 1
88 : USD 0.4663
120 : USD 0.3397
200 : USD 0.338
500 : USD 0.2649
1000 : USD 0.1755
3000 : USD 0.1658

11640
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1622
9000 : USD 0.1172

29100
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 2681
Multiples : 1
2681 : USD 0.1819

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
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Transistor Type
Width
Cnhts
Hts Code
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We are delighted to provide the IRLTS6342TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLTS6342TRPBF and other electronic components in the MOSFETs category and beyond.

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IRLTS6342PbF HEXFET Power MOSFET V 30 V DS V 12 V GS D 1 6 D R DS(on) max 17.5 m ( V = 4.5V) GS 2 5 D D R DS(on) max 22.0 m ( V = 2.5V) GS G 3 4 S Q 11 nC TSOP-6 g (typical) I D 8.3 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard TSOP-6 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note y Form Quantit IRLTS6342TRPBF TSOP-6 Tape and Reel 3000 Absolute Maximum Ratings Max. Parameter Units V 30 DS Drain-to-Source Voltage V 12 V Gate-to-Source Voltage GS Continuous Drain Current, V 4.5V 8.3 I T = 25C GS D A Continuous Drain Current, V 4.5V 6.7 A I T = 70C GS D A 64 I Pulsed Drain Current DM P T = 25C Power Dissipation 2.0 D A W 1.3 P T = 70C Power Dissipation A D Linear Derating Factor 0.02 W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 9/27/11 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage 30 V GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 23 mV/C D DSS J V = 4.5V, I = 8.3A R 14.0 17.5 DS(on) GS D Static Drain-to-Source On-Resistance m V = 2.5V, I = 6.7A 17.5 22.0 GS D V Gate Threshold Voltage 0.5 1.1 V V = V , I = 10A GS(th) DS GS D V Gate Threshold Voltage Coefficient -4.3 mV/C GS(th) I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 24V, V = 0V, T = 125C 150 DS GS J V = 12V I Gate-to-Source Forward Leakage 100 GSS GS nA V = -12V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 6.4A gfs Forward Transconductance 25 S DS D Q V = 4.5V g Total Gate Charge 11 GS Q Gate-to-Source Charge 0.5 nC V = 15V gs DS I = 6.4A Q Gate-to-Drain Charge 4.6 gd D R Gate Resistance 2.2 G t V = 15V, V = 4.5V d(on) Turn-On Delay Time 5.4 DD GS t I = 6.4A r Rise Time 11 D ns t Turn-Off Delay Time 32 R = 6.8 d(off) G t See Figs. 18 Fall Time 15 f C V = 0V Input Capacitance 1010 GS iss C Output Capacitance 96 pF V = 25V oss DS C Reverse Transfer Capacitance 70 = 1.0MHz rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I MOSFET symbol S Continuous Source Current 2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 64 p-n junction diode. S (Body Diode) V Diode Forward Voltage 1.2 V T = 25C, I = 8.3A, V = 0V SD J S GS t rr Reverse Recovery Time 13 20 ns T = 25C, I = 6.4A, V = 24V J F DD Q di/dt = 100/s Reverse Recovery Charge 5.8 8.7 nC rr Thermal Resistance Typ. Max. Parameter Units 62.5 R Junction-to-Ambient C/W JA Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T of approximately 90C. J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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