IRLTS6342PbF HEXFET Power MOSFET V 30 V DS V 12 V GS D 1 6 D R DS(on) max 17.5 m ( V = 4.5V) GS 2 5 D D R DS(on) max 22.0 m ( V = 2.5V) GS G 3 4 S Q 11 nC TSOP-6 g (typical) I D 8.3 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard TSOP-6 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note y Form Quantit IRLTS6342TRPBF TSOP-6 Tape and Reel 3000 Absolute Maximum Ratings Max. Parameter Units V 30 DS Drain-to-Source Voltage V 12 V Gate-to-Source Voltage GS Continuous Drain Current, V 4.5V 8.3 I T = 25C GS D A Continuous Drain Current, V 4.5V 6.7 A I T = 70C GS D A 64 I Pulsed Drain Current DM P T = 25C Power Dissipation 2.0 D A W 1.3 P T = 70C Power Dissipation A D Linear Derating Factor 0.02 W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 9/27/11 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage 30 V GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 23 mV/C D DSS J V = 4.5V, I = 8.3A R 14.0 17.5 DS(on) GS D Static Drain-to-Source On-Resistance m V = 2.5V, I = 6.7A 17.5 22.0 GS D V Gate Threshold Voltage 0.5 1.1 V V = V , I = 10A GS(th) DS GS D V Gate Threshold Voltage Coefficient -4.3 mV/C GS(th) I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 24V, V = 0V, T = 125C 150 DS GS J V = 12V I Gate-to-Source Forward Leakage 100 GSS GS nA V = -12V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 6.4A gfs Forward Transconductance 25 S DS D Q V = 4.5V g Total Gate Charge 11 GS Q Gate-to-Source Charge 0.5 nC V = 15V gs DS I = 6.4A Q Gate-to-Drain Charge 4.6 gd D R Gate Resistance 2.2 G t V = 15V, V = 4.5V d(on) Turn-On Delay Time 5.4 DD GS t I = 6.4A r Rise Time 11 D ns t Turn-Off Delay Time 32 R = 6.8 d(off) G t See Figs. 18 Fall Time 15 f C V = 0V Input Capacitance 1010 GS iss C Output Capacitance 96 pF V = 25V oss DS C Reverse Transfer Capacitance 70 = 1.0MHz rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I MOSFET symbol S Continuous Source Current 2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 64 p-n junction diode. S (Body Diode) V Diode Forward Voltage 1.2 V T = 25C, I = 8.3A, V = 0V SD J S GS t rr Reverse Recovery Time 13 20 ns T = 25C, I = 6.4A, V = 24V J F DD Q di/dt = 100/s Reverse Recovery Charge 5.8 8.7 nC rr Thermal Resistance Typ. Max. Parameter Units 62.5 R Junction-to-Ambient C/W JA Repetitive rating pulse width limited by max. junction temperature. Pulse width 400 s duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T of approximately 90C. J 2 www.irf.com