PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) V = 55V DSS Straight Lead (IRLU024N) Advanced Process Technology R = 0.14 DS(on) G Fast Switching Fully Avalanche Rated I = 10A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-Pak I-Pak The D-PAK is designed for surface mounting using vapor phase, infrared, or TO-251AA TO-252AA wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 10 D C GS I T = 100C Continuous Drain Current, V 10V 7.1 A D C GS I Pulsed Drain Current 40 DM P T = 25C Power Dissipation 28 W D C Linear Derating Factor 0.2 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 35 mJ AS I Avalanche Current 6.0 A AR E Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 5.3 JC R Case-to-Ambient (PCB mount)** 50 C/W JA R Junction-to-Ambient 110 JA ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 www.irf.com 1 5/4/99IRLR/U014N Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 VV = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.14 V = 10V, I = 6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.21 V = 4.5V, I = 5A GS D V Gate Threshold Voltage 1.0 VV = V , I = 250A GS(th) DS GS D g Forward Transconductance 3.1 SV = 25V, I = 6A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 7.9 I = 6A g D Q Gate-to-Source Charge 1.4 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 4.4 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 6.5 V = 28V d(on) DD t Rise Time 47 I = 6A r D ns t Turn-Off Delay Time 12 R = 6.2, V = 5.0V d(off) G GS t Fall Time 23 R = 4.5, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 265 V = 0V iss GS C Output Capacitance 80 pF V = 25V oss DS C Reverse Transfer Capacitance 38 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 10 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 40 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 6A, V = 0V SD J S GS t Reverse Recovery Time 37 56 nS T = 25C, I = 6A rr J F Q Reverse RecoveryCharge 48 71 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Starting T = 25C, L = 1.96mH This is applied for I-PAK, L of D-PAK is measured between J S R = 25 , I = 6A. (See Figure 12) lead and center of die contact G AS I 6.0A, di/dt 210A/s, V SD DD V , (BR)DSS T 175C J 2 www.irf.com