X-On Electronics has gained recognition as a prominent supplier of IRLU014NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLU014NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLU014NPBF Infineon

IRLU014NPBF electronic component of Infineon
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Part No.IRLU014NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC
Datasheet: IRLU014NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2987 ea
Line Total: USD 1.3 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2987
10 : USD 1.2636
100 : USD 1.053
250 : USD 0.8892
1000 : USD 0.743
1500 : USD 0.7313

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRLU014NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLU014NPBF and other electronic components in the MOSFETs category and beyond.

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PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) V = 55V DSS Straight Lead (IRLU024N) Advanced Process Technology R = 0.14 DS(on) G Fast Switching Fully Avalanche Rated I = 10A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-Pak I-Pak The D-PAK is designed for surface mounting using vapor phase, infrared, or TO-251AA TO-252AA wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 10 D C GS I T = 100C Continuous Drain Current, V 10V 7.1 A D C GS I Pulsed Drain Current 40 DM P T = 25C Power Dissipation 28 W D C Linear Derating Factor 0.2 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 35 mJ AS I Avalanche Current 6.0 A AR E Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 5.3 JC R Case-to-Ambient (PCB mount)** 50 C/W JA R Junction-to-Ambient 110 JA ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 www.irf.com 1 5/4/99IRLR/U014N Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 VV = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.14 V = 10V, I = 6A GS D R Static Drain-to-Source On-Resistance DS(on) 0.21 V = 4.5V, I = 5A GS D V Gate Threshold Voltage 1.0 VV = V , I = 250A GS(th) DS GS D g Forward Transconductance 3.1 SV = 25V, I = 6A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 7.9 I = 6A g D Q Gate-to-Source Charge 1.4 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 4.4 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 6.5 V = 28V d(on) DD t Rise Time 47 I = 6A r D ns t Turn-Off Delay Time 12 R = 6.2, V = 5.0V d(off) G GS t Fall Time 23 R = 4.5, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 265 V = 0V iss GS C Output Capacitance 80 pF V = 25V oss DS C Reverse Transfer Capacitance 38 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 10 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 40 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 6A, V = 0V SD J S GS t Reverse Recovery Time 37 56 nS T = 25C, I = 6A rr J F Q Reverse RecoveryCharge 48 71 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Starting T = 25C, L = 1.96mH This is applied for I-PAK, L of D-PAK is measured between J S R = 25 , I = 6A. (See Figure 12) lead and center of die contact G AS I 6.0A, di/dt 210A/s, V SD DD V , (BR)DSS T 175C J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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