X-On Electronics has gained recognition as a prominent supplier of IRLR2703PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR2703PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR2703PBF Infineon

IRLR2703PBF electronic component of Infineon
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Part No.IRLR2703PBF
Manufacturer: Infineon
Category: MOSFETs
Description: International Rectifier MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC
Datasheet: IRLR2703PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 25
Multiples : 75
25 : USD 0.5663
300 : USD 0.5148
1250 : USD 0.4633
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8177
10 : USD 0.6999
100 : USD 0.5371
500 : USD 0.4754
1000 : USD 0.3749
2500 : USD 0.3742
10000 : USD 0.3676
25000 : USD 0.3447
50000 : USD 0.3392
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.9055
3 : USD 0.8114
4 : USD 0.5732
55 : USD 0.5398
N/A

Obsolete
0
MOQ : 150
Multiples : 75
150 : USD 0.506
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRLR2703PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR2703PBF and other electronic components in the MOSFETs category and beyond.

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Logic-Level Gate Drive Ultra Low On-Resistance D V = 30V Surface Mount (IRLR2703) DSS Straight Lead (IRLU2703) Advanced Process Technology R = 0.045 DS(on) G Fast Switching Fully Avalanche Rated I = 23A D S Lead-Free Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-Pak I-Pak The D-PAK is designed for surface mounting using vapor phase, infrared, or TO-251AA TO-252AA wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 23 D C GS I T = 100C Continuous Drain Current, V 10V 16 A D C GS I Pulsed Drain Current 96 DM P T = 25C Power Dissipation 45 W D C Linear Derating Factor 0.30 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 77 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.3 JC R Case-to-Ambient (PCB mount)** 50 C/W JA R Junction-to-Ambient 110 JA %& (( www.irf.com 1 12/6/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.045 V = 10V, I = 14A GS D R Static Drain-to-Source On-Resistance DS(on) 0.065 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.4 S V = 25V, I = 14A fs DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 15 I = 14A g D Q Gate-to-Source Charge 4.6 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 9.3 V = 4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 8.5 V = 15V d(on) DD t Rise Time 140 I = 14A r D ns t Turn-Off Delay Time 12 R = 12, V = 4.5V d(off) G GS t Fall Time 20 R = 1.0, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D nH 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 450 V = 0V iss GS C Output Capacitance 210 pF V = 25V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 23 (Body Diode) showing the & G I Pulsed Source Current integral reverse SM 96 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 14A, V = 0V SD J S GS t Reverse Recovery Time 65 97 ns T = 25C, I = 14A rr J F Q Reverse RecoveryCharge 140 210 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Caculated continuous current based on maximum allowable max. junction temperature. ( See fig. 11 ) junction temperature Package limitation current = 20A. V = 15V, starting T = 25C, L =570H This is applied for I-PAK, L of D-PAK is measured DD J S R = 25, I = 14A. (See Figure 12) G AS between lead and center of die contact. I 14A, di/dt 140A/s, V V , Uses IRL2703 data and test conditions. SD DD (BR)DSS T 175C J Pulse width 300s duty cycle 2%. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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