Logic-Level Gate Drive Ultra Low On-Resistance D V = 30V Surface Mount (IRLR2703) DSS Straight Lead (IRLU2703) Advanced Process Technology R = 0.045 DS(on) G Fast Switching Fully Avalanche Rated I = 23A D S Lead-Free Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-Pak I-Pak The D-PAK is designed for surface mounting using vapor phase, infrared, or TO-251AA TO-252AA wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 23 D C GS I T = 100C Continuous Drain Current, V 10V 16 A D C GS I Pulsed Drain Current 96 DM P T = 25C Power Dissipation 45 W D C Linear Derating Factor 0.30 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 77 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.3 JC R Case-to-Ambient (PCB mount)** 50 C/W JA R Junction-to-Ambient 110 JA %& (( www.irf.com 1 12/6/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.045 V = 10V, I = 14A GS D R Static Drain-to-Source On-Resistance DS(on) 0.065 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.4 S V = 25V, I = 14A fs DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 15 I = 14A g D Q Gate-to-Source Charge 4.6 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 9.3 V = 4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 8.5 V = 15V d(on) DD t Rise Time 140 I = 14A r D ns t Turn-Off Delay Time 12 R = 12, V = 4.5V d(off) G GS t Fall Time 20 R = 1.0, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D nH 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 450 V = 0V iss GS C Output Capacitance 210 pF V = 25V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 23 (Body Diode) showing the & G I Pulsed Source Current integral reverse SM 96 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 14A, V = 0V SD J S GS t Reverse Recovery Time 65 97 ns T = 25C, I = 14A rr J F Q Reverse RecoveryCharge 140 210 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Caculated continuous current based on maximum allowable max. junction temperature. ( See fig. 11 ) junction temperature Package limitation current = 20A. V = 15V, starting T = 25C, L =570H This is applied for I-PAK, L of D-PAK is measured DD J S R = 25, I = 14A. (See Figure 12) G AS between lead and center of die contact. I 14A, di/dt 140A/s, V V , Uses IRL2703 data and test conditions. SD DD (BR)DSS T 175C J Pulse width 300s duty cycle 2%. 2 www.irf.com