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X-On Electronics has gained recognition as a prominent supplier of IRLR024 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLR024 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLR024 Vishay

IRLR024 electronic component of Vishay
IRLR024 Vishay
IRLR024 MOSFETs
IRLR024  Semiconductors

Images are for reference only
See Product Specifications
Part No. IRLR024
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
Datasheet: IRLR024 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 2.3122
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.0129
10 : USD 3.3405
100 : USD 2.808
500 : USD 2.3587
1000 : USD 2.045
2500 : USD 1.952
5000 : USD 1.952
10000 : USD 1.9404
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Technology
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRLR024 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLR024 and other electronic components in the MOSFETs category and beyond.

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IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available Surface Mount (IRLR024/SiHLR024) R ()V = 5.0 V 0.10 DS(on) GS RoHS* Straight Lead (IRLU024/SiHLU024) Q (Max.) (nC) 18 g COMPLIANT Available in Tape and Reel Q (nC) 4.5 gs Q (nC) 12 Logic-Level Gate Drive gd Configuration Single R Specified at V = 4 V and 5 V DS(on) GS Fast Switching D Lead (Pb)-free Available DPAK IPAK DESCRIPTION (TO-252) (TO-251) D Third generation Power MOSFETs from Vishay provide the D G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S S G cost-effectiveness. D G The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRLU/SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a IRLR024PbF IRLR024TRPbF IRLU024PbF Lead (Pb)-free a SiHLR024-E3 SiHLR024T-E3 SiHLU024-E3 a IRLR024 IRLR024TR IRLU024 SnPb a SiHLR024 SiHLR024T SiHLU024 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS T = 25 C 14 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 9.2 A C a Pulsed Drain Current I 56 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 91 mJ AS Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 541 H, R = 25 , I = 14 A (see fig. 12). DD J G AS c. I 17 A, dI/dt 140 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91322 www.vishay.com S-82993-Rev. B, 19-Jan-09 1IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.068 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 8.4 A - - 0.10 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 7.0 A - - 0.14 GS D b Forward Transconductance g V = 25 V, I = 8.4 A 7.3 - - S fs DS D Dynamic Input Capacitance C - 870 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -53- rss Total Gate Charge Q -- 18 g I = 17 A, V = 48 V, D DS Gate-Source Charge Q --V = 5.0 V 4.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --12 gd Turn-On Delay Time t -11 - d(on) Rise Time t - 110 - r V = 30 V, I = 17 A, DD D ns b R = 9.0 , R = 1.7 , see fig. 10 G D Turn-Off Delay Time t -23- d(off) Fall Time t -41- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 14 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 56 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 260 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.75 1.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91322 2 S-82993-Rev. B, 19-Jan-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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