IRF6636PbF IRF6636TRPbF DirectFET Power MOSFET RoHs Compliant Lead-Free (Qualified up to 260C Reflow) V V R R DSS GS DS(on) DS(on) Application Specific MOSFETs 20V max 20V max 3.2m 10V 4.6m 4.5V Ideal for CPU Core DC-DC Converters Q Q Q Q Q V Low Conduction Losses g tot gd gs2 rr oss gs(th) High Cdv/dt Immunity 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT Description TM The IRF6636PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6636PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 20 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 18 I T = 25C GS A D I T = 70C Continuous Drain Current, V 10V 15 A GS D A Continuous Drain Current, V 10V 81 I T = 25C C GS D I Pulsed Drain Current 140 DM E 28 Single Pulse Avalanche Energy mJ AS I 14 Avalanche Current A AR 20 6.0 I = 18A I = 14A D D V = 16V 5.0 DS 15 V = 10V DS 4.0 10 3.0 T = 125C J 2.0 5 1.0 T = 25C J 0 0.0 0 1 2 3 4 5 6 7 8 9 10 010 20 30 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.27mH, R = 25, I = 14A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 05/29/06 Typical R (m ) DS(on) V , Gate-to-Source Volta ge (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 20 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 15 mV/C DSS J D R V = 10V, I = 18A Static Drain-to-Source On-Resistance 3.2 4.5 m GS D DS(on) V = 4.5V, I = 14A 4.6 6.4 GS D V V = V , I = 250A Gate Threshold Voltage 1.55 2.45 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.4 mV/C GS(th) J I V = 16V, V = 0V Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 16V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 14A gfs Forward Transconductance 52 S DS D Q Total Gate Charge 18 27 g V = 10V Q Pre-Vth Gate-to-Source Charge 5.9 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 1.9 nC GS gs2 I = 14A Q Gate-to-Drain Charge 6.1 gd D Q Gate Charge Overdrive 4.1 See Fig. 15 godr Q Switch Charge (Q + Q ) 8.0 sw gs2 gd Q V = 10V, V = 0V Output Charge 10 nC oss DS GS R Gate Resistance 1.5 G t V = 16V, V = 4.5V Turn-On Delay Time 14 d(on) DD GS I = 14A t Rise Time 19 D r t Turn-Off Delay Time 16 ns Clamped Inductive Load d(off) t See Fig. 16 & 17 Fall Time 6.2 f V = 0V C Input Capacitance 2420 iss GS C V = 10V Output Capacitance 780 pF DS oss C Reverse Transfer Capacitance 360 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 52 S (Body Diode) A showing the I integral reverse Pulsed Source Current 140 SM (Body Diode) p-n junction diode. V T = 25C, I = 14A, V = 0V Diode Forward Voltage 1.0 V J S GS SD T = 25C, I = 14A t Reverse Recovery Time 16 24 ns rr J F Q Reverse Recovery Charge 7.3 11 nC di/dt = 100A/s See Fig. 18 rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com