IRF6644PbF IRF6644TRPbF DirectFET Power MOSFET RoHS Compliant V V R DSS GS DS(on) Lead-Free (Qualified up to 260C Reflow) 100V max 20V max 10.3m 10V Application Specific MOSFETs Q Q V Ideal for High Performance Isolated Converter g tot gd gs(th) Primary Switch Socket 35nC 11.5nC 3.7V Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN Description TM The IRF6644PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Max. Parameter Units 100 V Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V 10V 10.3 D A GS I T = 70C Continuous Drain Current, V 10V 8.3 A GS D A Continuous Drain Current, V 10V 60 I T = 25C C GS D 82 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 220 mJ AS 6.2 I Avalanche Current A AR 13 0.08 T = 25C I = 6.2A A D V = 7.0V GS 12 0.06 V = 8.0V GS 11 0.04 V = 10V T = 125C GS J 0.02 10 T = 25C V = 15V J GS 0.00 9 0 4 8 12 16 20 4 6 8 10 12 14 16 V , Gate-to-Source Voltage (V) GS I , Drain Current (A) D Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 12mH, R = 25, I = 6.2A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 8/18/06 Typical R (on), ( ) DS Typical R (m) DS(on) Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 100 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.11 V/C DSS J D V = 10V, I = 10.3A R Static Drain-to-Source On-Resistance 10.3 13 m DS(on) GS D V V = V , I = 150A Gate Threshold Voltage 2.8 4.8 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -10 mV/C GS(th) J I V = 100V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 80V, V = 0V, T = 125C 250 DS GS J = 20V I Gate-to-Source Forward Leakage 100 nA V GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 6.2A gfs Forward Transconductance 15 S DS D Q Total Gate Charge 35 47 g Q V = 50V Pre-Vth Gate-to-Source Charge 8.0 gs1 DS Q V = 10V Post-Vth Gate-to-Source Charge 1.6 nC gs2 GS Q I = 6.2A Gate-to-Drain Charge 11.5 17.3 gd D Q Gate Charge Overdrive 13 See Fig. 15 godr Q Switch Charge (Q + Q ) 13.1 sw gs2 gd V = 16V, V = 0V Q Output Charge 17 nC DS GS oss R Gate Resistance 1.0 2.0 G V = 50V, V = 10V t Turn-On Delay Time 17 d(on) DD GS t I = 6.2A Rise Time 26 r D t R =6.2 Turn-Off Delay Time 34 ns d(off) G t Fall Time 16 f C V = 0V Input Capacitance 2210 GS iss V = 25V C Output Capacitance 420 pF DS oss C Reverse Transfer Capacitance 100 = 1.0MHz rss V = 0V, V = 1.0V, f=1.0MHz C Output Capacitance 2120 oss GS DS V = 0V, V = 80V, f=1.0MHz C Output Capacitance 240 oss GS DS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 10 MOSFET symbol S (Body Diode) A showing the I integral reverse Pulsed Source Current 82 SM p-n junction diode. (Body Diode) V T = 25C, I = 6.2A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t T = 25C, I = 6.2A, V = 50V Reverse Recovery Time 42 63 ns J F DD rr Q Reverse Recovery Charge 69 100 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com