IRLI540G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G Logic-level gate drive R specified at V = 4 V and 5 V DS (on) GS Fast switching SS S DD Ease of paralleling G N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) 100 DS Third generation power MOSFETs from Vishay provide the R ()V = 5 V 0.077 DS(on) GS designer with the best combination of fast switching, Q (Max.) (nC) 64 g ruggedized device design, low on-resistance and Q (nC) 9.4 cost-effectiveness. gs Q (nC) 27 gd The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. Configuration Single The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10 0 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLI540GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 10 GS T = 25 C 17 C Continuous drain current V at 10 V I GS D T = 100 C 12 A C a Pulsed drain current I 68 DM Linear derating factor 0.32 W/C b Single pulse avalanche energy E 400 mJ AS Maximum power dissipation T = 25 C P 48 W C D c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 2.1 mH, R = 25 , I = 17 A (see fig. 12) DD J g AS c. I 28 A, dI/dt 170 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0454-Rev. C, 10-May-2021 Document Number: 90399 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLI540G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.1 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 10 A - - 0.077 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 8.5 A - - 0.11 GS D b Forward transconductance g V = 25 V, I = 10 A 12 - - S fs DS D Dynamic Input capacitance C - 2200 - iss V = 0 V, GS Output capacitance C -V = 25 V, 560- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -140- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 64 g I = 28 A, V = 80 V, D DS Gate-source charge Q --V = 5 V 9.4 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --27 gd Turn-on delay time t -8.5 - d(on) V = 50 V, I = 28 A, Rise time t DD D - 170 - r R = 4.5 R = 1.7 , ns g , D b Turn-off delay time t -35- d(off) see fig. 10 Fall time t -80- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 17 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 68 SM S b Body diode voltage V T = 25 C, I = 17 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 130 260 ns rr b T = 25 C, I = 28 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.5 2.9 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0454-Rev. C, 10-May-2021 Document Number: 90399 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000