X-On Electronics has gained recognition as a prominent supplier of IRLI630GPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLI630GPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLI630GPBF Vishay

IRLI630GPBF electronic component of Vishay
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Part No.IRLI630GPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 200V 6.2 Amp
Datasheet: IRLI630GPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 1.2474 ea
Line Total: USD 31.18 
Availability - 0
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
849
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.706
10 : USD 1.727
100 : USD 1.584
250 : USD 1.43
500 : USD 1.331
1000 : USD 1.287
2000 : USD 1.287
5000 : USD 1.254
10000 : USD 1.232

   
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We are delighted to provide the IRLI630GPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLI630GPBF and other electronic components in the MOSFETs category and beyond.

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IRLI630G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G Logic-level gate drive R specified at V = 4 V and 5 V DS(on) GS Fast switching SS S Ease of paralleling DD G Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provides the V (V) 200 DS designer with the best combination of fast switching, R ()V = 5.0 V 0.40 DS(on) GS ruggedized device design, low on-resistance and cost effectiveness. Q (Max.) (nC) 40 g The TO-220 FULLPAK eliminates the need for additiona l Q (nC) 5.5 gs insulating hardware in commercial-industrial applications. Q (nC) 24 gd The molding compound used provides a high isolation capability and a low thermal resistance between the tab and Configuration Single external heatsink. This isolation is equivalent to using a 10 0 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLI630GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 10 GS T = 25 C 6.2 C Continuous drain current V at 5.0 V I GS D T = 100 C 3.9 A C a Pulsed drain current I 25 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 125 mJ AS a Repetitive avalanche current I 6.2 A AR a Repetitive avalanche energy E 3.5 mJ AR Maximum power dissipation T = 25 C P 35 W C D c Peak diode recovery dV/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 2.4 mH, R = 25 , I = 6.2 A (see fig. 12) DD J G AS c. I 9.0 A, dI/dt 120 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0473-Rev. B, 17-May-2021 Document Number: 91313 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLI630G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 3.7 A - - 0.40 GS D Drain-source on-state resistance R DS(on) b V =4.0 V I = 3.1 A - - 0.50 GS D b Forward transconductance g V = 50 V, I = 5.4 A 4.8 - - S fs DS D Dynamic Input capacitance C - 1100 - iss V = 0 V, GS Output capacitance C -V = 25 V, 220- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -70- rss Total gate charge Q -- 40 g I = 9.0 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 5.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --24 gd Turn-on delay time t -8.0 - d(on) V = 100 V, I = 9.0 A, Rise time t DD D -57 - r R = 6.0 R = 11, ns G , D Turn-off delay time t -3 b 8- d(off) see fig. 10 Fall time t -33- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 6.2 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 25 SM S b Body diode voltage V T = 25 C, I = 6.2 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 230 350 ns rr b T = 25 C, I = 9.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.7 2.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0473-Rev. B, 17-May-2021 Document Number: 91313 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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