IRLI630G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G Logic-level gate drive R specified at V = 4 V and 5 V DS(on) GS Fast switching SS S Ease of paralleling DD G Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provides the V (V) 200 DS designer with the best combination of fast switching, R ()V = 5.0 V 0.40 DS(on) GS ruggedized device design, low on-resistance and cost effectiveness. Q (Max.) (nC) 40 g The TO-220 FULLPAK eliminates the need for additiona l Q (nC) 5.5 gs insulating hardware in commercial-industrial applications. Q (nC) 24 gd The molding compound used provides a high isolation capability and a low thermal resistance between the tab and Configuration Single external heatsink. This isolation is equivalent to using a 10 0 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLI630GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 10 GS T = 25 C 6.2 C Continuous drain current V at 5.0 V I GS D T = 100 C 3.9 A C a Pulsed drain current I 25 DM Linear derating factor 0.28 W/C b Single pulse avalanche energy E 125 mJ AS a Repetitive avalanche current I 6.2 A AR a Repetitive avalanche energy E 3.5 mJ AR Maximum power dissipation T = 25 C P 35 W C D c Peak diode recovery dV/dt dV/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 2.4 mH, R = 25 , I = 6.2 A (see fig. 12) DD J G AS c. I 9.0 A, dI/dt 120 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0473-Rev. B, 17-May-2021 Document Number: 91313 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLI630G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 3.7 A - - 0.40 GS D Drain-source on-state resistance R DS(on) b V =4.0 V I = 3.1 A - - 0.50 GS D b Forward transconductance g V = 50 V, I = 5.4 A 4.8 - - S fs DS D Dynamic Input capacitance C - 1100 - iss V = 0 V, GS Output capacitance C -V = 25 V, 220- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -70- rss Total gate charge Q -- 40 g I = 9.0 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 5.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --24 gd Turn-on delay time t -8.0 - d(on) V = 100 V, I = 9.0 A, Rise time t DD D -57 - r R = 6.0 R = 11, ns G , D Turn-off delay time t -3 b 8- d(off) see fig. 10 Fall time t -33- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 6.2 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 25 SM S b Body diode voltage V T = 25 C, I = 6.2 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 230 350 ns rr b T = 25 C, I = 9.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.7 2.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0473-Rev. B, 17-May-2021 Document Number: 91313 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000