HEXFET Power MOSFET V 20 V DS V 12 V gs max R DS(on) max 3.0 ( V = 4.5V) GS m ( V = 2.5V) 4.0 GS Q 44 nC g typ PQFN 5X6 mm I D 80 A ( T = 25C) c(Bottom) Applications Battery Protection Switch Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.4C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRLH6224TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRLH6224TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 20 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 10V 28 GS D A I T = 70C Continuous Drain Current, V 10V 22 GS D A I T = 25C Continuous Drain Current, V 10V 105 GS D C(Bottom) A I T = 100C Continuous Drain Current, V 10V 67 C(Bottom) GS D I T = 25C Continuous Drain Current, V 10V (Package Limited) 80 C GS D Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 A D W Power Dissipation P T = 25C 52 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V DSS V = 0V, I = 250A GS D VDSS/ TJ Breakdown Voltage Temp. Coefficient 5.0 mV/C Reference to 25C, ID = 1.0mA R Static Drain-to-Source On-Resistance 2.3 3.0 V = 4.5V, I = 20A DS(on) GS D m 3.2 4.0 V = 2.5V, I = 16A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 50A DS GS D V Gate Threshold Voltage Coefficient -4.2 mV/C GS(th) I Drain-to-Source Leakage Current 1 V = 16V, V = 0V DSS DS GS A 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 150 S VDS = 10V, ID = 20A Q Total Gate Charge 86 nC V = 10V, V = 15V, I = 20A g GS DS D Q Total Gate Charge 44 g Q Pre-Vth Gate-to-Source Charge 3.8 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 4.7 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 8.5 I = 20A gd D Q Gate Charge Overdrive 27 godr Q Switch Charge (Q + Q ) 13 sw gs2 gd Q Output Charge 30 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.0 G t Turn-On Delay Time 9.4 V = 15V, V = 4.5V d(on) DD GS t Rise Time 23 I = 20A r D ns t Turn-Off Delay Time 67 R =1.8 d(off) G t Fall Time 36 f C Input Capacitance V = 0V iss 3710 GS C Output Capacitance 1050 pF V = 10V oss DS C Reverse Transfer Capacitance = 1.0MHz rss 770 Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 125 mJ AS Avalanche Current I 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 67 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 38 57 ns T = 25C, I = 20A, V = 15V rr DD J F di/dt = 300A/s Qrr Reverse Recovery Charge 82 125 nC t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R (Bottom) Junction-to-Case 2.4 JC R (Top) Junction-to-Case 34 C/W JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA