IRLHS6376PbF HEXFET Power MOSFET V 30 V DS V 12 V GS R DS(on) max 63 m ( V = 4.5V) GS R DS(on) max 82 m ( V = 2.5V) GS I D 3.4 A ( T = 25C) c(Bottom) 2mm x 2mm Dual PQFN Applications Features and Benefits Features Resulting Benefits Low R ( 63m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 19C/W) Enable better thermal dissipation Low Profile ( 1.0mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type Standard Pack Note Form Quantity IRLHS6376TRPBF PQFN Dual 2mm x 2mm Tape and Reel 4000 IRLHS6376TR2PBF PQFN Dual 2mm x 2mm Tape and Reel 400 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V 3.6 GS D A Continuous Drain Current, V 4.5V I T = 70C GS 2.9 D A Continuous Drain Current, V 4.5V 7.6 I T = 25C C(Bottom) GS D A I T = 100C Continuous Drain Current, V 4.5V 4.9 GS D C(Bottom) Continuous Drain Current, V 4.5V (Package Limited) 3.4 I T = 25C D C(Bottom) GS Pulsed Drain Current I 30 DM Power Dissipation P T = 25C 1.5 D A W Power Dissipation P T = 25C 6.6 D C(Bottom) Linear Derating Factor 0.012 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 07/19/11 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 48 63 V = 4.5V, I = 3.4A DS(on) GS D m 61 82 V = 2.5V, I = 3.4A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 10 A DS GS D V Gate Threshold Voltage Coefficient -3.6 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 8.8 S V = 10V, I = 3.4A DS D Q 2.8 V = 15V g Total Gate Charge DS Q 0.13 nC V = 4.5V gs Gate-to-Source Charge GS Q 1.1 I = 3.4A (See Fig.17 & 18) gd Gate-to-Drain Charge D R Gate Resistance 4.6 G t Turn-On Delay Time 4.4 V = 10V, V = 4.5V d(on) DD GS t Rise Time 11 ID = 3.4A r ns t Turn-Off Delay Time 11 R =1.8 d(off) G t Fall Time 9.4 See Fig.15 f C Input Capacitance 270 V = 0V iss GS C Output Capacitance 32 pF V = 25V oss DS C Reverse Transfer Capacitance 20 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 7.6 showing the (Body Diode) A G I Pulsed Source Current integral reverse SM 30 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.2 V T = 25C, I = 3.4A , V = 0V SD J S GS t Reverse Recovery Time 8.0 12 ns T = 25C, I = 3.4A , V = 15V rr DD J F Q Reverse Recovery Charge 5.9 8.9 nC di/dt = 260A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 19 JC Junction-to-Case R (Top) 175 C/W JC Junction-to-Ambient R 86 JA Junction-to-Ambient R (<10s) 69 JA Repetitive rating pulse width limited by max. junction temperature. Current limited by package. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com