IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package V (V) 100 DS High Voltage Isolation = 2.5 kV (t = 60 s RMS Available f = 60 Hz) R ()V = 5 V 0.27 DS(on) GS RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Q (Max.) (nC) 12 g Logic-Level Gate Drive Q (nC) 3.0 gs R Specified at V = 4 V and 5 V DS (on) GS Q (nC) 7.1 gd Fast Switching Ease of Paralleling Configuration Single Lead (Pb)-free Available D TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation S capability and a low thermal resistance between the tab and S D external heatsink. This isolation is equivalent to using a 100 G N-Channel MOSFET micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK IRLI520GPbF Lead (Pb)-free SiHLI520G-E3 IRLI520G SnPb SiHLI520G ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 7.2 C Continuous Drain Current V at 5 V I GS D T = 100 C 5.1 A C a Pulsed Drain Current I 29 DM Linear Derating Factor 0.24 W/C b Single Pulse Avalanche Energy E 170 mJ AS a Repetitive Avalanche Current I 7.2 A AR a Repetitive Avalanche Energy E 3.7 mJ AR Maximum Power Dissipation T = 25 C P 37 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.9 mH, R = 25 , I = 7.2 A (see fig. 12). DD J G AS c. I 9.2 A, dI/dt 110 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90397 www.vishay.com S-82994-Rev. A, 12-Jan-09 1IRLI520G, SiHLI520G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -4.1 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 4.3 A - - 0.27 GS D Drain-Source On-State Resistance R DS (on) b V = 4 V I = 3.6 A - - 0.38 GS D b Forward Transconductance g V = 50 V, I = 4.3 A 3.3 - - S fs DS D Dynamic Input Capacitance C - 490 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 150- oss DS pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Q -- 12 g I = 9.2 A, V = 80 V, D DS Gate-Source Charge Q --V = 5 V 3.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.1 gd Turn-On Delay Time t -9.8 - d(on) V = 50 V, I = 9.2 A, DD D Rise Time t -64 - r R = 9 R = 5.2 , ns G , D b Turn-Off Delay Time t -21- d(off) see fig. 10 Fall Time t -27- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 7.2 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 29 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 7.2 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 190 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.83 1.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90397 2 S-82994-Rev. A, 12-Jan-09