IRL630S, SiHL630S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G Logic-level gate drive Available R specified at V = 4 V and 5 V DS(on) GS 150 C operating temperature D G Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 200 DS DESCRIPTION R ( )V = 5 V 0.40 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 40 g designer with the best combination of fast switching, Q (nC) 5.5 gs ruggedized device design, low on-resistance and cost-effectiveness. Q (nC) 24 gd 2 The D PAK (TO-263) is a surface-mount power package Configuration Single capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHL630S-GE3 SiHL630STRR-GE3 SiHL630STRL-GE3 a a Lead (Pb)-free IRL630SPbF IRL630STRRPbF IRL630STRLPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source Voltage V 10 GS T = 25 C 9.0 C Continuous drain current V at 5 V I GS D T = 100 C 5.7 A C a Pulsed drain current I 36 DM Linear derating factor 0.59 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 250 mJ AS a Avalanche current I 9.0 A AR a Repetitive avalanche energy E 7.4 mJ AR Maximum power dissipation T = 25 C 74 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.1 A c Peak diode recovery dv/dt dv/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 4.6 mH, R = 25 , I = 9.0 A (see fig. 12) DD J g AS c. I 9.0 A, di/dt 120 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0684-Rev. D, 07-Sep-2020 Document Number: 90390 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRL630S, SiHL630S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 5.4 A - - 0.40 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 4.5 A - - 0.50 GS D b Forward transconductance g V = 50 V, I = 5.4 A 4.8 - - S fs DS D Dynamic Input capacitance C - 1100 - iss V = 0 V, GS Output capacitance C -V = 25 V, 220- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -70- rss Total gate charge Q -- 40 g I = 9.0 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 5.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --24 gd Turn-on delay time t -8.0 - d(on) Rise time t -57 - r V = 100 V, I = 9.0 A, DD D ns b R = 6.0 , R = 11 , see fig. 10 g D Turn-off delay time t -38- d(off) Fall time t -33- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 9.0 S showing the A integral reverse G a Pulsed diode forward current I -- 36 p - n junction diode SM S b Body diode voltage V T = 25 C, I = 9.0 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 230 350 ns rr b T = 25 C, I = 9.0 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -1.7 2.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0684-Rev. D, 07-Sep-2020 Document Number: 90390 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000