X-On Electronics has gained recognition as a prominent supplier of IRL640SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL640SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL640SPBF Vishay

Hot IRL640SPBF electronic component of Vishay
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Part No.IRL640SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 200V 17 Amp
Datasheet: IRL640SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
31: USD 1.0335 ea
Line Total: USD 32.04 
Availability - 337
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 31  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6626
10 : USD 1.45
25 : USD 1.4327
50 : USD 1.4243
100 : USD 1.3689
500 : USD 1.1719

337
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 31
Multiples : 1
31 : USD 1.0335
40 : USD 1.0335
150 : USD 1.0335
500 : USD 1.0335
2000 : USD 1.0335

187
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 2.5064
10 : USD 2.1949
30 : USD 1.9999
100 : USD 1.6001
500 : USD 1.5104
1000 : USD 1.4702

6587
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.0063
10 : USD 1.4825
100 : USD 1.3932

118
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.436
10 : USD 1.75
12 : USD 1.428
33 : USD 1.344
500 : USD 1.302

1532
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 8
Multiples : 1
8 : USD 2.2201
10 : USD 1.7481
25 : USD 1.7135
50 : USD 1.6969
100 : USD 1.5911
500 : USD 1.2263

   
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We are delighted to provide the IRL640SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL640SPBF and other electronic components in the MOSFETs category and beyond.

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IRL640S, SiHL640S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 200 Available in tape and reel DS Dynamic dV/dt rating R ( )V = 5 V 0.18 DS(on) GS Available Repetitive avalanche rated Q max. (nC) 66 g Logic-level gate drive Q (nC) 9.0 R specified at V = 4 V and 5 V DS(on) GS gs Available Fast switching Q (nC) 38 gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 Note D * This datasheet provides information about parts that are 2 D PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, D G ruggedized device design, low on-resistance and S S cost-effectiveness. 2 The D PAK is a surface mount power package capable of N-Channel MOSFET accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHL640S-GE3 SiHL640STRL-GE3 SiHL640STRR-GE3 a a IRL640SPbF IRL640STRLPbF IRL640STRRPbF Lead (Pb)-free a a SiHL640S-E3 SiHL640STL-E3 SiHL640STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 10 GS T = 25 C 17 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 11 A C a Pulsed Drain Current I 68 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 580 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C 125 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Temperature for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 3.0 mH, R = 25 , I = 17 A (see fig. 12). DD J g AS c. I 17 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0763-Rev. D, 02-May-16 Document Number: 91306 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRL640S, SiHL640S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 62 thJA Maximum Junction-to-Ambient R -- 40 C/W a thJA (PCB mount) Maximum Junction-to-Case (Drain) R -- 1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 10 A - - 0.18 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 8.5 A - - 0.27 GS D b Forward Transconductance g V = 50 V, I = 10 A 16 - - S fs DS D Dynamic Input Capacitance C - 1800 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 400- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -120- rss Total Gate Charge Q -- 66 g I = 17 A, V = 160 V, D DS Gate-Source Charge Q --V = 5.0 V 9.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --38 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -83 - r V = 100 V, I = 17 A, DD D ns b R = 4.6 , R = 5.7 , see fig. 10 Turn-Off Delay Time t -4g D 4- d(off) Fall Time t -52- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.3 - 1.2 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 17 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 68 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 17 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 310 470 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.2 4.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0763-Rev. D, 02-May-16 Document Number: 91306 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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