X-On Electronics has gained recognition as a prominent supplier of IRLB4030PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLB4030PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLB4030PBF Infineon

Hot IRLB4030PBF electronic component of Infineon
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See Product Specifications
Part No.IRLB4030PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Datasheet: IRLB4030PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 1.872 ea
Line Total: USD 93.6 
Availability - 5432
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
5432
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 50
Multiples : 50
50 : USD 1.872
200 : USD 1.872
500 : USD 1.872
1250 : USD 1.872
2000 : USD 1.872

53
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.2536
10 : USD 2.8002
30 : USD 2.5163
100 : USD 2.1336
500 : USD 2.0022
1000 : USD 1.9449

1382
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 3.5334
10 : USD 2.6194
100 : USD 2.0621
500 : USD 1.9395
1000 : USD 1.9283

68
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 4.018
7 : USD 2.604
19 : USD 2.464
500 : USD 2.436
1000 : USD 2.38

996
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 15
Multiples : 1
15 : USD 2.7137
50 : USD 2.6975
100 : USD 2.145

970
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 28
Multiples : 1
28 : USD 3.873
50 : USD 3.6182
300 : USD 3.1722
500 : USD 2.9812

4472
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 5
Multiples : 1
5 : USD 5.0161
10 : USD 3.9199
25 : USD 3.7761
100 : USD 2.8715
500 : USD 2.3921
1000 : USD 1.9046

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the IRLB4030PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLB4030PBF and other electronic components in the MOSFETs category and beyond.

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97369 IRLB4030PbF Applications HEXFET Power MOSFET DC Motor Drive D High Efficiency Synchronous Rectification in SMPS V 100V DSS Uninterruptible Power Supply R typ. High Speed Power Switching 3.4m DS(on) Hard Switched and High Frequency Circuits G max. 4.3m I S 180A D Benefits Optimized for Logic Level Drive Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free TO-220AB GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 180 D C GS I T = 100C Continuous Drain Current, V 10V 130 A D C GS I DM Pulsed Drain Current 730 P T = 25C Maximum Power Dissipation 370 W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 16 V GS dv/dt Peak Diode Recovery 21 V/ns T Operating Junction and -55 to + 175 C J T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics E Single Pulse Avalanche Energy 305 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R C/W JC Junction-to-Case 0.40 R Case-to-Sink, Flat, Greased Surface 0.50 CS R 62 JA Junction-to-Ambient www.irf.com 1 02/12/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.4 4.3 V = 10V, I = 110A DS(on) m GS D 3.6 4.5 V = 4.5V, I = 92A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 2.1 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 320 S V = 25V, I = 110A DS D Q Total Gate Charge 87 130 I = 110A g D Q Gate-to-Source Charge 27 V = 50V gs DS nC Q Gate-to-Drain Mille) Charge 45 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 42 I = 110A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 74 V = 65V d(on) DD t Rise Time 330 I = 110A r D ns t Turn-Off Delay Time 110 R = 2.7 d(off) G t Fall Time 170 V = 4.5V f GS C Input Capacitance 11360 V = 0V iss GS C Output Capacitance 670 V = 50V oss DS C Reverse Transfer Capacitance 290 = 1.0MHz pF rss C eff. (ER) 760 V = 0V, V = 0V to 80V Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 1140 V = 0V, V = 0V to 80V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 180 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 730 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 110A, V = 0V SD J S GS t T = 25C V = 85V, Reverse Recovery Time 50 rr J R ns T = 125C I = 110A 60 J F di/dt = 100A/s Q Reverse Recovery Charge 88 T = 25C rr J nC 130 T = 125C J I T = 25C Reverse Recovery Current 3.3 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.05mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25 , I = 110A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For I 110A, di/dt 1330A/s, V V , T 175C. SD DD (BR)DSS J recommended footprint and soldering techniquea refer to applocation Pulse width 400s duty cycle 2%. note AN- 994 echniques refer to application note AN-994. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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