IRL8114PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications V 30V DSS D Low Voltage Power Tools R typ. 3.5m DS(on) max 4.5m G Benefits I 120A D (Silicon Limited) Low RDS(on) at 4.5V V GS S Low Gate Charge I D (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free S D G TO-220AB IRL8114PbF G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL8114PbF TO-220 Tube 50 IRL8114PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 120 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 85 A D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 90 D C GS I Pulsed Drain Current 440 DM P T = 25C Maximum Power Dissipation 115 D C W P T = 100C Maximum Power Dissipation 58 D C Linear Derating Factor 0.77 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 1.3 JC R Case-to-Sink, Flat Greased Surface C/W 0.50 CS R Junction-to-Ambient 62 JA Notes through are on page 7 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 11, 2015 IRL8114PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.017 mV/C Reference to 25C, I = 1mA (BR)DSS J D 3.5 4.5 V = 10V, I = 40A GS D R Static Drain-to-Source On-Resistance m DS(on) 4.6 5.8 V = 4.5V, I = 32A GS D V Gate Threshold Voltage 1.35 2.25 GS(th) V V = V , I = 250A DS GS D Gate Threshold Voltage Temp. Coefficient -6.7 V / T GS(th) J 1.0 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 24V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 173 S V = 15V, I = 32A DS D Q Total Gate Charge 19 29 g Q Pre-Vth Gate-to-Source Charge 5.0 V = 15V gs1 DS Q Post Vth Gate-to-Source Charge 3.0 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 6.7 I = 32A gd D Q Gate Charge Overdrive 4.3 See Fig. 16 godr Q Switch Charge (Q + Q) 9.7 sw gs2 gd Q Output Charge 15 nC V = 16V,V = 0V oss DS GS t Turn-On Delay Time 27 V = 15V d(on) DD t Rise Time 103 I = 32A r D ns t Turn-Off Delay Time 29 R = 10 d(off) G t Fall Time 45 V = 4.5V f GS C Input Capacitance 2660 V = 0V iss GS C Output Capacitance 600 pF V = 15V oss DS C Reverse Transfer Capacitance 300 = 1.0MHz rss Avalanche Characteristics E Single Pulse Avalanche Energy AS (Thermally limited) 200 mJ I Avalanche Current AR 32 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I 120 S (Body Diode) showing the A G Pulsed Source Current integral reverse I 440 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C,I = 32A,V = 0V SD J S GS t Reverse Recovery Time 22 33 ns T = 25C, I = 32A , V = 15V rr J F DD Q Reverse Recovery Charge 13 20 nC di/dt = 100A/s rr 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 11, 2015