X-On Electronics has gained recognition as a prominent supplier of IRL640 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL640 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL640 Vishay

IRL640 electronic component of Vishay
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Part No.IRL640
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRL640PBF
Datasheet: IRL640 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.0589
10 : USD 4.061
100 : USD 3.7006
250 : USD 3.3403
500 : USD 2.9938
1000 : USD 2.6001
2000 : USD 2.6001
5000 : USD 2.5579
10000 : USD 2.4737
N/A

Obsolete
   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
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We are delighted to provide the IRL640 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL640 and other electronic components in the MOSFETs category and beyond.

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IRL640, SiHL640 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 200 DS Repetitive avalanche rated Available R ( )V = 5.0 V 0.18 DS(on) GS Logic-level gate drive Q max. (nC) 66 Available g R specified at V = 4 V and 5 V DS(on) GS Q (nC) 9.0 gs Fast switching Q (nC) 38 gd Ease of paralleling Configuration Single Simple drive requirements Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 Note TO-220AB * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provides the S S D designer with the best combination of fast switching, G N-Channel MOSFET ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL640PbF Lead (Pb)-free SiHL640-E3 IRL640 SnPb SiHL640 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 10 GS T = 25 C 17 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 11 A C a Pulsed Drain Current I 68 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 580 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 3.0 mH, R = 25 I = 17 A (see fig. 12). DD J g AS c. I 17 A, dI/dt 150 A/ms, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0763-Rev. C, 02-May-16 Document Number: 91305 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRL640, SiHL640 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 10 A - - 0.18 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 8.5 A - - 0.27 GS D b Forward Transconductance g V = 50 V, I = 10 A 16 - - S fs DS D Dynamic Input Capacitance C - 1800 - iss V = 0 V, GS Output Capacitance C -4V = 25 V 00- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -120- rss Total Gate Charge Q -- 66 g I = 17 A, V = 160 V, D DS Gate-Source Charge Q --V = 5.0 V 9.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --38 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -83 - r V = 100 V, I = 17 A DD D ns b R = 4.6 , R = 5.7 , see fig. 10 Turn-Off Delay Time t -4g D 4- d(off) Fall Time t -52- f Between lead, D Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.3 - 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 17 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 68 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 17 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 310 470 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.2 4.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0763-Rev. C, 02-May-16 Document Number: 91305 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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