IRL640, SiHL640 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 200 DS Repetitive avalanche rated Available R ( )V = 5.0 V 0.18 DS(on) GS Logic-level gate drive Q max. (nC) 66 Available g R specified at V = 4 V and 5 V DS(on) GS Q (nC) 9.0 gs Fast switching Q (nC) 38 gd Ease of paralleling Configuration Single Simple drive requirements Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 Note TO-220AB * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provides the S S D designer with the best combination of fast switching, G N-Channel MOSFET ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL640PbF Lead (Pb)-free SiHL640-E3 IRL640 SnPb SiHL640 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 10 GS T = 25 C 17 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 11 A C a Pulsed Drain Current I 68 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 580 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 3.0 mH, R = 25 I = 17 A (see fig. 12). DD J g AS c. I 17 A, dI/dt 150 A/ms, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0763-Rev. C, 02-May-16 Document Number: 91305 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRL640, SiHL640 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 10 A - - 0.18 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 8.5 A - - 0.27 GS D b Forward Transconductance g V = 50 V, I = 10 A 16 - - S fs DS D Dynamic Input Capacitance C - 1800 - iss V = 0 V, GS Output Capacitance C -4V = 25 V 00- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -120- rss Total Gate Charge Q -- 66 g I = 17 A, V = 160 V, D DS Gate-Source Charge Q --V = 5.0 V 9.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --38 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -83 - r V = 100 V, I = 17 A DD D ns b R = 4.6 , R = 5.7 , see fig. 10 Turn-Off Delay Time t -4g D 4- d(off) Fall Time t -52- f Between lead, D Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.3 - 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 17 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 68 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 17 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 310 470 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.2 4.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0763-Rev. C, 02-May-16 Document Number: 91305 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000